Abstract
We have studied the effect of ion implantation temperature on the nature of cleavage and layer transfer, and the electrical properties in hydrogen implanted p-Si. The lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films were analyzed with elastic recoil detection, respectively. Implantations performed at -140 deg. C [low temperature (LT)] and room temperature (RT) resulted in a variation in the thickness and surface morphology of the transferred layers. The transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the transferred layer produced by -140 deg. C hydrogen implantation. The as-transferred layer obtained from RT-implanted p-Si wafer was n-type, but converted to p-type after annealing at 650 deg. C or higher. The transferred layer obtained from LT-implanted Si wafer was highly resistive even after high temperature annealing. These variations were observed to be correlated with the damage profiles measured by ion channeling; channeling data showed that the room temperature implantation provided a deeper and narrower damage distribution than that obtained from the -140 deg. C implantation. The nature of the implantation damage was evaluated with the aid of IR spectroscopy and was found to consist of Si-H defects. The
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Lee, J K;
Nastasi, M;
Theodore, N David;
Smalley, A;
Alford, T L;
Mayer, J W;
Cai, M;
Lau, S S;
[1]
DigitalDNA(Turkmenistan) Labs., Motorola Inc., 2100 East Elliot Rd. Tempe, Arizona 85284 (United States);
Department of Chemical and Materials Engineering, Arizona State University Tempe, Arizona 85287 (United States);
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093 (United States)]
- Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States)
Citation Formats
Lee, J K, Nastasi, M, Theodore, N David, Smalley, A, Alford, T L, Mayer, J W, Cai, M, Lau, S S, DigitalDNA(Turkmenistan) Labs., Motorola Inc., 2100 East Elliot Rd. Tempe, Arizona 85284 (United States), Department of Chemical and Materials Engineering, Arizona State University Tempe, Arizona 85287 (United States), and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093 (United States)].
Effects of hydrogen implantation temperature on ion-cut of silicon.
United States: N. p.,
2004.
Web.
doi:10.1063/1.1755851.
Lee, J K, Nastasi, M, Theodore, N David, Smalley, A, Alford, T L, Mayer, J W, Cai, M, Lau, S S, DigitalDNA(Turkmenistan) Labs., Motorola Inc., 2100 East Elliot Rd. Tempe, Arizona 85284 (United States), Department of Chemical and Materials Engineering, Arizona State University Tempe, Arizona 85287 (United States), & Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093 (United States)].
Effects of hydrogen implantation temperature on ion-cut of silicon.
United States.
https://doi.org/10.1063/1.1755851
Lee, J K, Nastasi, M, Theodore, N David, Smalley, A, Alford, T L, Mayer, J W, Cai, M, Lau, S S, DigitalDNA(Turkmenistan) Labs., Motorola Inc., 2100 East Elliot Rd. Tempe, Arizona 85284 (United States), Department of Chemical and Materials Engineering, Arizona State University Tempe, Arizona 85287 (United States), and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093 (United States)].
2004.
"Effects of hydrogen implantation temperature on ion-cut of silicon."
United States.
https://doi.org/10.1063/1.1755851.
@misc{etde_20619007,
title = {Effects of hydrogen implantation temperature on ion-cut of silicon}
author = {Lee, J K, Nastasi, M, Theodore, N David, Smalley, A, Alford, T L, Mayer, J W, Cai, M, Lau, S S, DigitalDNA(Turkmenistan) Labs., Motorola Inc., 2100 East Elliot Rd. Tempe, Arizona 85284 (United States), Department of Chemical and Materials Engineering, Arizona State University Tempe, Arizona 85287 (United States), and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093 (United States)]}
abstractNote = {We have studied the effect of ion implantation temperature on the nature of cleavage and layer transfer, and the electrical properties in hydrogen implanted p-Si. The lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films were analyzed with elastic recoil detection, respectively. Implantations performed at -140 deg. C [low temperature (LT)] and room temperature (RT) resulted in a variation in the thickness and surface morphology of the transferred layers. The transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the transferred layer produced by -140 deg. C hydrogen implantation. The as-transferred layer obtained from RT-implanted p-Si wafer was n-type, but converted to p-type after annealing at 650 deg. C or higher. The transferred layer obtained from LT-implanted Si wafer was highly resistive even after high temperature annealing. These variations were observed to be correlated with the damage profiles measured by ion channeling; channeling data showed that the room temperature implantation provided a deeper and narrower damage distribution than that obtained from the -140 deg. C implantation. The nature of the implantation damage was evaluated with the aid of IR spectroscopy and was found to consist of Si-H defects. The type and population of these defects were observed to be dependent on the ion implantation temperature. In both room temperature and -140 deg. C implantations, the presence of the implantation damage facilitated the nucleation of Si-H defects that developed into H platelets, which were the precursor defects for the cleavage and the layer transfer.}
doi = {10.1063/1.1755851}
journal = []
issue = {1}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jul}
}
title = {Effects of hydrogen implantation temperature on ion-cut of silicon}
author = {Lee, J K, Nastasi, M, Theodore, N David, Smalley, A, Alford, T L, Mayer, J W, Cai, M, Lau, S S, DigitalDNA(Turkmenistan) Labs., Motorola Inc., 2100 East Elliot Rd. Tempe, Arizona 85284 (United States), Department of Chemical and Materials Engineering, Arizona State University Tempe, Arizona 85287 (United States), and Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093 (United States)]}
abstractNote = {We have studied the effect of ion implantation temperature on the nature of cleavage and layer transfer, and the electrical properties in hydrogen implanted p-Si. The lattice damage and the hydrogen concentration in the as-implanted Si and transferred Si films were analyzed with elastic recoil detection, respectively. Implantations performed at -140 deg. C [low temperature (LT)] and room temperature (RT) resulted in a variation in the thickness and surface morphology of the transferred layers. The transferred layer from room temperature hydrogen ion implantation was both thicker and atomically smoother than the transferred layer produced by -140 deg. C hydrogen implantation. The as-transferred layer obtained from RT-implanted p-Si wafer was n-type, but converted to p-type after annealing at 650 deg. C or higher. The transferred layer obtained from LT-implanted Si wafer was highly resistive even after high temperature annealing. These variations were observed to be correlated with the damage profiles measured by ion channeling; channeling data showed that the room temperature implantation provided a deeper and narrower damage distribution than that obtained from the -140 deg. C implantation. The nature of the implantation damage was evaluated with the aid of IR spectroscopy and was found to consist of Si-H defects. The type and population of these defects were observed to be dependent on the ion implantation temperature. In both room temperature and -140 deg. C implantations, the presence of the implantation damage facilitated the nucleation of Si-H defects that developed into H platelets, which were the precursor defects for the cleavage and the layer transfer.}
doi = {10.1063/1.1755851}
journal = []
issue = {1}
volume = {96}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jul}
}