Abstract
Interplay between microwave field and Andreev current in epitaxial NbN/AlN/NbN tunnel junctions have been investigated. The subharmonic-gap structures (dV/dI dip-structures) were clearly observed for almost all junctions without microwave field, and the voltage positions of dV/dI dips were well explained by Octavio, Tinkham, Blonder and Klapwijk (OTBK) theory based on multiple-Andreev reflection (MAR). In the presence of microwave field, the dV/dI-V curve only in a high-J{sub c} (5 kA/cm{sup 2}) junction has a rich subgap structure due to photon-assisted MAR. The observed microwave-induced dV/dI structure was qualitatively explained by the OTBK theory with an effective time-dependent voltage model.
Citation Formats
Okanoue, K, Ishida, H, Hamasaki, K, Kawakami, A, and Wang, Z.
Photon-assisted multiple-Andreev reflections in high-J{sub c} NbN/AlN/NbN tunnel junctions.
Netherlands: N. p.,
2004.
Web.
doi:10.1016/j.physc.2004.02.228.
Okanoue, K, Ishida, H, Hamasaki, K, Kawakami, A, & Wang, Z.
Photon-assisted multiple-Andreev reflections in high-J{sub c} NbN/AlN/NbN tunnel junctions.
Netherlands.
https://doi.org/10.1016/j.physc.2004.02.228
Okanoue, K, Ishida, H, Hamasaki, K, Kawakami, A, and Wang, Z.
2004.
"Photon-assisted multiple-Andreev reflections in high-J{sub c} NbN/AlN/NbN tunnel junctions."
Netherlands.
https://doi.org/10.1016/j.physc.2004.02.228.
@misc{etde_20618585,
title = {Photon-assisted multiple-Andreev reflections in high-J{sub c} NbN/AlN/NbN tunnel junctions}
author = {Okanoue, K, Ishida, H, Hamasaki, K, Kawakami, A, and Wang, Z}
abstractNote = {Interplay between microwave field and Andreev current in epitaxial NbN/AlN/NbN tunnel junctions have been investigated. The subharmonic-gap structures (dV/dI dip-structures) were clearly observed for almost all junctions without microwave field, and the voltage positions of dV/dI dips were well explained by Octavio, Tinkham, Blonder and Klapwijk (OTBK) theory based on multiple-Andreev reflection (MAR). In the presence of microwave field, the dV/dI-V curve only in a high-J{sub c} (5 kA/cm{sup 2}) junction has a rich subgap structure due to photon-assisted MAR. The observed microwave-induced dV/dI structure was qualitatively explained by the OTBK theory with an effective time-dependent voltage model.}
doi = {10.1016/j.physc.2004.02.228}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}
title = {Photon-assisted multiple-Andreev reflections in high-J{sub c} NbN/AlN/NbN tunnel junctions}
author = {Okanoue, K, Ishida, H, Hamasaki, K, Kawakami, A, and Wang, Z}
abstractNote = {Interplay between microwave field and Andreev current in epitaxial NbN/AlN/NbN tunnel junctions have been investigated. The subharmonic-gap structures (dV/dI dip-structures) were clearly observed for almost all junctions without microwave field, and the voltage positions of dV/dI dips were well explained by Octavio, Tinkham, Blonder and Klapwijk (OTBK) theory based on multiple-Andreev reflection (MAR). In the presence of microwave field, the dV/dI-V curve only in a high-J{sub c} (5 kA/cm{sup 2}) junction has a rich subgap structure due to photon-assisted MAR. The observed microwave-induced dV/dI structure was qualitatively explained by the OTBK theory with an effective time-dependent voltage model.}
doi = {10.1016/j.physc.2004.02.228}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}