Abstract
We have examined the fabrication conditions of epitaxial CeO{sub 2} films on a-plane sapphire substrates, and also examined epitaxial growth of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}(YBCO) films on CeO{sub 2}/a-plane sapphire substrate. The {theta}/2{theta} XRD analysis of these composite films revealed that grains of the CeO{sub 2} and YBCO on CeO{sub 2}/a-plane sapphire substrate were perpendicular to the substrate. From the phi-scan XRD measurement, we found that the four 1 0 2 phi-scan peaks of the YBCO film were observed and the peak positions were shifted by 45 deg. compared with those of the CeO{sub 2} films. From the peak shifts we could estimate that the angle between the [1 0 0] axis of the CeO{sub 2} and the [1 0 0] axis of the YBCO was 45 deg. . From temperature dependence of resistivity of the YBCO/CeO{sub 2}/a-plane sapphire substrates, we obtained a zero-resistance temperature (T{sub C}) of 88.6 K. We found that their crystallinity and critical temperature (T{sub C}) were quite similar to those of YBCO film on CeO{sub 2}/r-plane sapphire substrate. At the moment, YBCO thin films on a-plane sapphire are inferior to YBCO thin film on r-plane sapphire in terms of surface resistance.
Citation Formats
Shirakawa, M, Miura, M, Ohazama, T, Shingai, Y, Saito, A, Mukaida, M, and Ohshima, S.
Fabrication and characterization of YBCO thin film on CeO{sub 2}/a-plane sapphire substrate.
Netherlands: N. p.,
2004.
Web.
doi:10.1016/j.physc.2004.02.227.
Shirakawa, M, Miura, M, Ohazama, T, Shingai, Y, Saito, A, Mukaida, M, & Ohshima, S.
Fabrication and characterization of YBCO thin film on CeO{sub 2}/a-plane sapphire substrate.
Netherlands.
https://doi.org/10.1016/j.physc.2004.02.227
Shirakawa, M, Miura, M, Ohazama, T, Shingai, Y, Saito, A, Mukaida, M, and Ohshima, S.
2004.
"Fabrication and characterization of YBCO thin film on CeO{sub 2}/a-plane sapphire substrate."
Netherlands.
https://doi.org/10.1016/j.physc.2004.02.227.
@misc{etde_20618547,
title = {Fabrication and characterization of YBCO thin film on CeO{sub 2}/a-plane sapphire substrate}
author = {Shirakawa, M, Miura, M, Ohazama, T, Shingai, Y, Saito, A, Mukaida, M, and Ohshima, S}
abstractNote = {We have examined the fabrication conditions of epitaxial CeO{sub 2} films on a-plane sapphire substrates, and also examined epitaxial growth of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}(YBCO) films on CeO{sub 2}/a-plane sapphire substrate. The {theta}/2{theta} XRD analysis of these composite films revealed that grains of the CeO{sub 2} and YBCO on CeO{sub 2}/a-plane sapphire substrate were perpendicular to the substrate. From the phi-scan XRD measurement, we found that the four 1 0 2 phi-scan peaks of the YBCO film were observed and the peak positions were shifted by 45 deg. compared with those of the CeO{sub 2} films. From the peak shifts we could estimate that the angle between the [1 0 0] axis of the CeO{sub 2} and the [1 0 0] axis of the YBCO was 45 deg. . From temperature dependence of resistivity of the YBCO/CeO{sub 2}/a-plane sapphire substrates, we obtained a zero-resistance temperature (T{sub C}) of 88.6 K. We found that their crystallinity and critical temperature (T{sub C}) were quite similar to those of YBCO film on CeO{sub 2}/r-plane sapphire substrate. At the moment, YBCO thin films on a-plane sapphire are inferior to YBCO thin film on r-plane sapphire in terms of surface resistance.}
doi = {10.1016/j.physc.2004.02.227}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}
title = {Fabrication and characterization of YBCO thin film on CeO{sub 2}/a-plane sapphire substrate}
author = {Shirakawa, M, Miura, M, Ohazama, T, Shingai, Y, Saito, A, Mukaida, M, and Ohshima, S}
abstractNote = {We have examined the fabrication conditions of epitaxial CeO{sub 2} films on a-plane sapphire substrates, and also examined epitaxial growth of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}(YBCO) films on CeO{sub 2}/a-plane sapphire substrate. The {theta}/2{theta} XRD analysis of these composite films revealed that grains of the CeO{sub 2} and YBCO on CeO{sub 2}/a-plane sapphire substrate were perpendicular to the substrate. From the phi-scan XRD measurement, we found that the four 1 0 2 phi-scan peaks of the YBCO film were observed and the peak positions were shifted by 45 deg. compared with those of the CeO{sub 2} films. From the peak shifts we could estimate that the angle between the [1 0 0] axis of the CeO{sub 2} and the [1 0 0] axis of the YBCO was 45 deg. . From temperature dependence of resistivity of the YBCO/CeO{sub 2}/a-plane sapphire substrates, we obtained a zero-resistance temperature (T{sub C}) of 88.6 K. We found that their crystallinity and critical temperature (T{sub C}) were quite similar to those of YBCO film on CeO{sub 2}/r-plane sapphire substrate. At the moment, YBCO thin films on a-plane sapphire are inferior to YBCO thin film on r-plane sapphire in terms of surface resistance.}
doi = {10.1016/j.physc.2004.02.227}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}