Abstract
We have developed fabrication technique of high-T{sub c} superconductor films on sapphire substrates with CeO{sub 2} buffer layer for SN transition type fault current limiter. For large size deposition by pulsed laser deposition (PLD), we use two-dimensional scanning technique in which the substrate is moved along two directions that cross at right angles on plasma plume. It is suitable for large size PLD deposition because scale up of the substrate is available by simple scale up of the equipments. In this technique, however, deposition structure is multi-line with certain overlap region, so the suitable deposition condition is somewhat different from one for the fixed substrate deposition. We have investigated critical current dependence to directions of current flows. It shows uniform distribution regardless the direction of the current and deposition lines, and relative position to the deposition lines.
Citation Formats
Konishi, M, Hahakura, S, Ohmatsu, K, Hayashi, K, and Yasuda, K.
HoBCO thin films for SN transition type fault current limiter.
Netherlands: N. p.,
2004.
Web.
doi:10.1016/j.physc.2004.01.128.
Konishi, M, Hahakura, S, Ohmatsu, K, Hayashi, K, & Yasuda, K.
HoBCO thin films for SN transition type fault current limiter.
Netherlands.
https://doi.org/10.1016/j.physc.2004.01.128
Konishi, M, Hahakura, S, Ohmatsu, K, Hayashi, K, and Yasuda, K.
2004.
"HoBCO thin films for SN transition type fault current limiter."
Netherlands.
https://doi.org/10.1016/j.physc.2004.01.128.
@misc{etde_20618505,
title = {HoBCO thin films for SN transition type fault current limiter}
author = {Konishi, M, Hahakura, S, Ohmatsu, K, Hayashi, K, and Yasuda, K}
abstractNote = {We have developed fabrication technique of high-T{sub c} superconductor films on sapphire substrates with CeO{sub 2} buffer layer for SN transition type fault current limiter. For large size deposition by pulsed laser deposition (PLD), we use two-dimensional scanning technique in which the substrate is moved along two directions that cross at right angles on plasma plume. It is suitable for large size PLD deposition because scale up of the substrate is available by simple scale up of the equipments. In this technique, however, deposition structure is multi-line with certain overlap region, so the suitable deposition condition is somewhat different from one for the fixed substrate deposition. We have investigated critical current dependence to directions of current flows. It shows uniform distribution regardless the direction of the current and deposition lines, and relative position to the deposition lines.}
doi = {10.1016/j.physc.2004.01.128}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}
title = {HoBCO thin films for SN transition type fault current limiter}
author = {Konishi, M, Hahakura, S, Ohmatsu, K, Hayashi, K, and Yasuda, K}
abstractNote = {We have developed fabrication technique of high-T{sub c} superconductor films on sapphire substrates with CeO{sub 2} buffer layer for SN transition type fault current limiter. For large size deposition by pulsed laser deposition (PLD), we use two-dimensional scanning technique in which the substrate is moved along two directions that cross at right angles on plasma plume. It is suitable for large size PLD deposition because scale up of the substrate is available by simple scale up of the equipments. In this technique, however, deposition structure is multi-line with certain overlap region, so the suitable deposition condition is somewhat different from one for the fixed substrate deposition. We have investigated critical current dependence to directions of current flows. It shows uniform distribution regardless the direction of the current and deposition lines, and relative position to the deposition lines.}
doi = {10.1016/j.physc.2004.01.128}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}