Abstract
We have proposed a self-epitaxy process for CeO{sub 2} cap buffer layer deposition by using PLD in order to improve the deposition rate in the IBAD process. The process is combined with a thin IBAD buffer layer by a short time deposition and a self-epitaxy PLD cap layer by high rate deposition. The materials for both IBAD buffer layer and PLD cap layer were studied in terms of the grain alignment. Gd{sub 2}Zr{sub 2}O{sub 7} (GZO) for the IBAD buffer layer and CeO{sub 2} for the PLD cap layer are the best combination. It was estimated that a deposition time of the combination process could be about one-third of the conventional IBAD process. A 55 m long PLD-CeO{sub 2} cap layer was fabricated at the tape transfer speed of 5 m/h on an IBAD-GZO tape by a reel to reel process. A PLD-CeO{sub 2} cap layer improved the {delta}phi value of the buffer layer and also the uniformity of the {delta}phi values throughout the whole length. While the {delta}phi values of IBAD-GZO were in the range of 13.9 deg. and 18.8 deg., those of PLD-CeO{sub 2} cap layer were improved to be in the range of 5.7 deg. and 8.7
More>>
Citation Formats
Muroga, Takemi, Watanabe, Tomonori, Miyata, Seiki, Iwai, Hiroyuki, Yamada, Yutaka, Izumi, Teruo, Shiohara, Yuh, Kato, Takeharu, Sasaki, Hirokazu, Sugawara, Yoshihiro, and Hirayama, Tsukasa.
Rapid fabrication of highly textured CeO{sub 2} cap layer on IBAD tape for YBCO coated conductor.
Netherlands: N. p.,
2004.
Web.
doi:10.1016/j.physc.2004.02.201.
Muroga, Takemi, Watanabe, Tomonori, Miyata, Seiki, Iwai, Hiroyuki, Yamada, Yutaka, Izumi, Teruo, Shiohara, Yuh, Kato, Takeharu, Sasaki, Hirokazu, Sugawara, Yoshihiro, & Hirayama, Tsukasa.
Rapid fabrication of highly textured CeO{sub 2} cap layer on IBAD tape for YBCO coated conductor.
Netherlands.
https://doi.org/10.1016/j.physc.2004.02.201
Muroga, Takemi, Watanabe, Tomonori, Miyata, Seiki, Iwai, Hiroyuki, Yamada, Yutaka, Izumi, Teruo, Shiohara, Yuh, Kato, Takeharu, Sasaki, Hirokazu, Sugawara, Yoshihiro, and Hirayama, Tsukasa.
2004.
"Rapid fabrication of highly textured CeO{sub 2} cap layer on IBAD tape for YBCO coated conductor."
Netherlands.
https://doi.org/10.1016/j.physc.2004.02.201.
@misc{etde_20618459,
title = {Rapid fabrication of highly textured CeO{sub 2} cap layer on IBAD tape for YBCO coated conductor}
author = {Muroga, Takemi, Watanabe, Tomonori, Miyata, Seiki, Iwai, Hiroyuki, Yamada, Yutaka, Izumi, Teruo, Shiohara, Yuh, Kato, Takeharu, Sasaki, Hirokazu, Sugawara, Yoshihiro, and Hirayama, Tsukasa}
abstractNote = {We have proposed a self-epitaxy process for CeO{sub 2} cap buffer layer deposition by using PLD in order to improve the deposition rate in the IBAD process. The process is combined with a thin IBAD buffer layer by a short time deposition and a self-epitaxy PLD cap layer by high rate deposition. The materials for both IBAD buffer layer and PLD cap layer were studied in terms of the grain alignment. Gd{sub 2}Zr{sub 2}O{sub 7} (GZO) for the IBAD buffer layer and CeO{sub 2} for the PLD cap layer are the best combination. It was estimated that a deposition time of the combination process could be about one-third of the conventional IBAD process. A 55 m long PLD-CeO{sub 2} cap layer was fabricated at the tape transfer speed of 5 m/h on an IBAD-GZO tape by a reel to reel process. A PLD-CeO{sub 2} cap layer improved the {delta}phi value of the buffer layer and also the uniformity of the {delta}phi values throughout the whole length. While the {delta}phi values of IBAD-GZO were in the range of 13.9 deg. and 18.8 deg., those of PLD-CeO{sub 2} cap layer were improved to be in the range of 5.7 deg. and 8.7 deg.}
doi = {10.1016/j.physc.2004.02.201}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}
title = {Rapid fabrication of highly textured CeO{sub 2} cap layer on IBAD tape for YBCO coated conductor}
author = {Muroga, Takemi, Watanabe, Tomonori, Miyata, Seiki, Iwai, Hiroyuki, Yamada, Yutaka, Izumi, Teruo, Shiohara, Yuh, Kato, Takeharu, Sasaki, Hirokazu, Sugawara, Yoshihiro, and Hirayama, Tsukasa}
abstractNote = {We have proposed a self-epitaxy process for CeO{sub 2} cap buffer layer deposition by using PLD in order to improve the deposition rate in the IBAD process. The process is combined with a thin IBAD buffer layer by a short time deposition and a self-epitaxy PLD cap layer by high rate deposition. The materials for both IBAD buffer layer and PLD cap layer were studied in terms of the grain alignment. Gd{sub 2}Zr{sub 2}O{sub 7} (GZO) for the IBAD buffer layer and CeO{sub 2} for the PLD cap layer are the best combination. It was estimated that a deposition time of the combination process could be about one-third of the conventional IBAD process. A 55 m long PLD-CeO{sub 2} cap layer was fabricated at the tape transfer speed of 5 m/h on an IBAD-GZO tape by a reel to reel process. A PLD-CeO{sub 2} cap layer improved the {delta}phi value of the buffer layer and also the uniformity of the {delta}phi values throughout the whole length. While the {delta}phi values of IBAD-GZO were in the range of 13.9 deg. and 18.8 deg., those of PLD-CeO{sub 2} cap layer were improved to be in the range of 5.7 deg. and 8.7 deg.}
doi = {10.1016/j.physc.2004.02.201}
journal = []
issue = {1-2}
volume = {412-414}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Oct}
}