Abstract
A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123 nA. The working principle of this silicon-base MTT can be described by a circuit theory.
Citation Formats
Huang, Y W, Lo, C K, Yao, Y D, Hsieh, L C, Ju, J J, Huang, D R, and Huang, J H.
Giant magnetocurrent in silicon-base magnetic tunneling transistor.
Netherlands: N. p.,
2004.
Web.
doi:10.1016/j.jmmm.2004.04.065.
Huang, Y W, Lo, C K, Yao, Y D, Hsieh, L C, Ju, J J, Huang, D R, & Huang, J H.
Giant magnetocurrent in silicon-base magnetic tunneling transistor.
Netherlands.
https://doi.org/10.1016/j.jmmm.2004.04.065
Huang, Y W, Lo, C K, Yao, Y D, Hsieh, L C, Ju, J J, Huang, D R, and Huang, J H.
2004.
"Giant magnetocurrent in silicon-base magnetic tunneling transistor."
Netherlands.
https://doi.org/10.1016/j.jmmm.2004.04.065.
@misc{etde_20618257,
title = {Giant magnetocurrent in silicon-base magnetic tunneling transistor}
author = {Huang, Y W, Lo, C K, Yao, Y D, Hsieh, L C, Ju, J J, Huang, D R, and Huang, J H}
abstractNote = {A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123 nA. The working principle of this silicon-base MTT can be described by a circuit theory.}
doi = {10.1016/j.jmmm.2004.04.065}
journal = []
issue = {5-6}
volume = {282}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Nov}
}
title = {Giant magnetocurrent in silicon-base magnetic tunneling transistor}
author = {Huang, Y W, Lo, C K, Yao, Y D, Hsieh, L C, Ju, J J, Huang, D R, and Huang, J H}
abstractNote = {A magnetic tunneling transistor (MTT) has been successfully fabricated by growing a magnetic tunneling junction on a pre-fabricated p-n junction. A magnetobase current change of roughly 6300% at room temperature with the common collector configuration has been observed. The variation of the base current caused by external magnetic field is from 1.9 to 123 nA. The working principle of this silicon-base MTT can be described by a circuit theory.}
doi = {10.1016/j.jmmm.2004.04.065}
journal = []
issue = {5-6}
volume = {282}
journal type = {AC}
place = {Netherlands}
year = {2004}
month = {Nov}
}