Abstract
Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr{sup 1+}/Cr{sup 2+} states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as fast carrier capture by Zn-vacancies. (author)
Kadys, A;
Sudzius, M;
Jarasiunas, K;
[1]
Ivanov, V;
[2]
Godlewski, M;
[2]
College of Science, Cardinal S. Wyszynski University, Warsaw (Poland)];
Launay, J -C
[3]
- Department of Semiconductor Optoelectronics, Institute of Materials Science and Applied Research, Vilnius University, Vilnius (Lithuania)
- Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
- Institut de Chimie de la Matiere Condense de Bordeaux (ICMB), Pessac (France)
Citation Formats
Kadys, A, Sudzius, M, Jarasiunas, K, Ivanov, V, Godlewski, M, College of Science, Cardinal S. Wyszynski University, Warsaw (Poland)], and Launay, J -C.
Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique.
Poland: N. p.,
2004.
Web.
Kadys, A, Sudzius, M, Jarasiunas, K, Ivanov, V, Godlewski, M, College of Science, Cardinal S. Wyszynski University, Warsaw (Poland)], & Launay, J -C.
Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique.
Poland.
Kadys, A, Sudzius, M, Jarasiunas, K, Ivanov, V, Godlewski, M, College of Science, Cardinal S. Wyszynski University, Warsaw (Poland)], and Launay, J -C.
2004.
"Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique."
Poland.
@misc{etde_20617086,
title = {Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique}
author = {Kadys, A, Sudzius, M, Jarasiunas, K, Ivanov, V, Godlewski, M, College of Science, Cardinal S. Wyszynski University, Warsaw (Poland)], and Launay, J -C}
abstractNote = {Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr{sup 1+}/Cr{sup 2+} states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as fast carrier capture by Zn-vacancies. (author)}
journal = []
issue = {6}
volume = {105}
journal type = {AC}
place = {Poland}
year = {2004}
month = {Jul}
}
title = {Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique}
author = {Kadys, A, Sudzius, M, Jarasiunas, K, Ivanov, V, Godlewski, M, College of Science, Cardinal S. Wyszynski University, Warsaw (Poland)], and Launay, J -C}
abstractNote = {Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr{sup 1+}/Cr{sup 2+} states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as fast carrier capture by Zn-vacancies. (author)}
journal = []
issue = {6}
volume = {105}
journal type = {AC}
place = {Poland}
year = {2004}
month = {Jul}
}