Abstract
We investigate the spin resonance of electrons in one-side modulation doped Si{sub 1-x}Ge{sub x} (x = 0-10%) quantum wells defined by Si{sub 0.75}Ge{sub 0.25} barriers. In such structures, the Bychkov-Rashba effect includes an effective magnetic field in the quantum well layer which causes anisotropy of both g-factor and the spin coherence time. Evaluation of Rashba coefficient as a function of x yields a monotonic increase. For x = 5% the shift in the resonance field exceeds ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble. (author)
Malissa, H;
Jantsch, W;
Muehlberger, M;
Schaeffler, F;
[1]
Wilamowski, Z;
[2]
Draxler, M;
Bauer, P
[3]
- Institut fuer Halbeither- und Festkoerperphysik, Johannes Kepler Universitaet, Linz (Austria)
- Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
- Institut fuer Experimentalphysik, Johannes Kepler Universitaet, Linz (Austria)
Citation Formats
Malissa, H, Jantsch, W, Muehlberger, M, Schaeffler, F, Wilamowski, Z, Draxler, M, and Bauer, P.
Bychkov-Rashba effect and g-factor tuning in modulation doped SiGe quantum wells.
Poland: N. p.,
2004.
Web.
Malissa, H, Jantsch, W, Muehlberger, M, Schaeffler, F, Wilamowski, Z, Draxler, M, & Bauer, P.
Bychkov-Rashba effect and g-factor tuning in modulation doped SiGe quantum wells.
Poland.
Malissa, H, Jantsch, W, Muehlberger, M, Schaeffler, F, Wilamowski, Z, Draxler, M, and Bauer, P.
2004.
"Bychkov-Rashba effect and g-factor tuning in modulation doped SiGe quantum wells."
Poland.
@misc{etde_20617078,
title = {Bychkov-Rashba effect and g-factor tuning in modulation doped SiGe quantum wells}
author = {Malissa, H, Jantsch, W, Muehlberger, M, Schaeffler, F, Wilamowski, Z, Draxler, M, and Bauer, P}
abstractNote = {We investigate the spin resonance of electrons in one-side modulation doped Si{sub 1-x}Ge{sub x} (x = 0-10%) quantum wells defined by Si{sub 0.75}Ge{sub 0.25} barriers. In such structures, the Bychkov-Rashba effect includes an effective magnetic field in the quantum well layer which causes anisotropy of both g-factor and the spin coherence time. Evaluation of Rashba coefficient as a function of x yields a monotonic increase. For x = 5% the shift in the resonance field exceeds ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble. (author)}
journal = []
issue = {6}
volume = {105}
journal type = {AC}
place = {Poland}
year = {2004}
month = {Jul}
}
title = {Bychkov-Rashba effect and g-factor tuning in modulation doped SiGe quantum wells}
author = {Malissa, H, Jantsch, W, Muehlberger, M, Schaeffler, F, Wilamowski, Z, Draxler, M, and Bauer, P}
abstractNote = {We investigate the spin resonance of electrons in one-side modulation doped Si{sub 1-x}Ge{sub x} (x = 0-10%) quantum wells defined by Si{sub 0.75}Ge{sub 0.25} barriers. In such structures, the Bychkov-Rashba effect includes an effective magnetic field in the quantum well layer which causes anisotropy of both g-factor and the spin coherence time. Evaluation of Rashba coefficient as a function of x yields a monotonic increase. For x = 5% the shift in the resonance field exceeds ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble. (author)}
journal = []
issue = {6}
volume = {105}
journal type = {AC}
place = {Poland}
year = {2004}
month = {Jul}
}