Abstract
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consists of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 {mu}m revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots. (author)
Chwalisz, B;
Wysmolek, A;
Bozek, R;
Stepniewski, R;
Pakula, K;
Kossacki, P;
Golnik, A;
Baranowski, J M
[1]
- Institute of Experimental Physics, Warsaw University, Warsaw (Poland)
Citation Formats
Chwalisz, B, Wysmolek, A, Bozek, R, Stepniewski, R, Pakula, K, Kossacki, P, Golnik, A, and Baranowski, J M.
Spatially resolved micro-luminescence from GaN/AlGaN quantum dots.
Poland: N. p.,
2004.
Web.
Chwalisz, B, Wysmolek, A, Bozek, R, Stepniewski, R, Pakula, K, Kossacki, P, Golnik, A, & Baranowski, J M.
Spatially resolved micro-luminescence from GaN/AlGaN quantum dots.
Poland.
Chwalisz, B, Wysmolek, A, Bozek, R, Stepniewski, R, Pakula, K, Kossacki, P, Golnik, A, and Baranowski, J M.
2004.
"Spatially resolved micro-luminescence from GaN/AlGaN quantum dots."
Poland.
@misc{etde_20617071,
title = {Spatially resolved micro-luminescence from GaN/AlGaN quantum dots}
author = {Chwalisz, B, Wysmolek, A, Bozek, R, Stepniewski, R, Pakula, K, Kossacki, P, Golnik, A, and Baranowski, J M}
abstractNote = {We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consists of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 {mu}m revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots. (author)}
journal = []
issue = {6}
volume = {105}
journal type = {AC}
place = {Poland}
year = {2004}
month = {Jul}
}
title = {Spatially resolved micro-luminescence from GaN/AlGaN quantum dots}
author = {Chwalisz, B, Wysmolek, A, Bozek, R, Stepniewski, R, Pakula, K, Kossacki, P, Golnik, A, and Baranowski, J M}
abstractNote = {We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consists of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 {mu}m revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots. (author)}
journal = []
issue = {6}
volume = {105}
journal type = {AC}
place = {Poland}
year = {2004}
month = {Jul}
}