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Properties of gate oxide using BF{sub 2}{sup +} ions for creation of drain/source areas of p-channel transistors on silicon

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Abstract

No abstract prepared.
Authors:
Tarasenkov, A N; [1]  Gerasimenko, N N [2] 
  1. SNC 'TECHNOLOGICAL CENTRE', MIET (TU), Moscow (Russian Federation)
  2. Moscow Institute of Electronic Technology (TU), Moscow (Russian Federation)
Publication Date:
Jul 01, 2004
Product Type:
Conference
Resource Relation:
Conference: 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, Kazimierz Dolny (Poland), 14-17 Jun 2004; Other Information: PBD: 2004; Related Information: In: Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, 257 pages.
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON FLUORIDES; BREAKDOWN; CATIONS; DIFFUSION; ELECTRICAL PROPERTIES; ION IMPLANTATION; OXIDES; SILICON; TRANSISTORS
OSTI ID:
20616897
Research Organizations:
Maria Curie-Sklodowska Univ., Lublin (Poland); Technical University, Lublin (Poland); Wroclaw University of Technology, Wroclaw (Poland); Association of Polish Electrical Engineers, Lublin (Poland)
Country of Origin:
Poland
Language:
English
Other Identifying Numbers:
TRN: PL0500582060126
Availability:
Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland
Submitting Site:
INIS
Size:
page(s) 148
Announcement Date:
Aug 21, 2005

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Citation Formats

Tarasenkov, A N, and Gerasimenko, N N. Properties of gate oxide using BF{sub 2}{sup +} ions for creation of drain/source areas of p-channel transistors on silicon. Poland: N. p., 2004. Web.
Tarasenkov, A N, & Gerasimenko, N N. Properties of gate oxide using BF{sub 2}{sup +} ions for creation of drain/source areas of p-channel transistors on silicon. Poland.
Tarasenkov, A N, and Gerasimenko, N N. 2004. "Properties of gate oxide using BF{sub 2}{sup +} ions for creation of drain/source areas of p-channel transistors on silicon." Poland.
@misc{etde_20616897,
title = {Properties of gate oxide using BF{sub 2}{sup +} ions for creation of drain/source areas of p-channel transistors on silicon}
 author = {Tarasenkov, A N, and Gerasimenko, N N}
 abstractNote = {No abstract prepared.}
 place = {Poland}
 year = {2004}
 month = {Jul}
 }