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Optical properties of GaN synthesized by implantation of nitrogen ions into GaAs

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Abstract

No abstract prepared.
Authors:
Bumai, Yu A; Bobuchenko, D S; [1]  Akimov, A N; Vluasukova, L A; Filipp, A R [2] 
  1. Belarussian National Technical University, Minsk (Belarus)
  2. Belarussian State University, Minsk (Belarus)
Publication Date:
Jul 01, 2004
Product Type:
Conference
Resource Relation:
Conference: 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, Kazimierz Dolny (Poland), 14-17 Jun 2004; Other Information: PBD: 2004; Related Information: In: Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, 257 pages.
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CATHODOLUMINESCENCE; GALLIUM ARSENIDES; GALLIUM NITRIDES; INFRARED SPECTRA; ION IMPLANTATION; MASS SPECTROSCOPY; NITROGEN IONS; OPTICAL PROPERTIES; RADIATION DOSES; RAMAN SPECTRA; SECONDARY BEAMS; SPECTRAL REFLECTANCE; SUBSTRATES; SYNTHESIS
OSTI ID:
20616842
Research Organizations:
Maria Curie-Sklodowska Univ., Lublin (Poland); Technical University, Lublin (Poland); Wroclaw University of Technology, Wroclaw (Poland); Association of Polish Electrical Engineers, Lublin (Poland)
Country of Origin:
Poland
Language:
English
Other Identifying Numbers:
TRN: PL0500527060071
Availability:
Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland
Submitting Site:
INIS
Size:
page(s) 75
Announcement Date:
Aug 21, 2005

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Citation Formats

Bumai, Yu A, Bobuchenko, D S, Akimov, A N, Vluasukova, L A, and Filipp, A R. Optical properties of GaN synthesized by implantation of nitrogen ions into GaAs. Poland: N. p., 2004. Web.
Bumai, Yu A, Bobuchenko, D S, Akimov, A N, Vluasukova, L A, & Filipp, A R. Optical properties of GaN synthesized by implantation of nitrogen ions into GaAs. Poland.
Bumai, Yu A, Bobuchenko, D S, Akimov, A N, Vluasukova, L A, and Filipp, A R. 2004. "Optical properties of GaN synthesized by implantation of nitrogen ions into GaAs." Poland.
@misc{etde_20616842,
title = {Optical properties of GaN synthesized by implantation of nitrogen ions into GaAs}
 author = {Bumai, Yu A, Bobuchenko, D S, Akimov, A N, Vluasukova, L A, and Filipp, A R}
 abstractNote = {No abstract prepared.}
 place = {Poland}
 year = {2004}
 month = {Jul}
 }