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ETDEWEB   /       /    Implantation induced interdiffusion of InGaAs quantum dots - effect of ion species, dose and substrate temperature

Implantation induced interdiffusion of InGaAs quantum dots - effect of ion species, dose and substrate temperature

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Abstract

No abstract prepared.
Authors:
Ahmed, S; Too, P; Tabatabaian, Z; [1]  Amirov, K; Larsson, U; [2]  Lin, J; Haq, A [3] 
  1. Advanced Technology Institute, University of Surrey, Guildford (United Kingdom)
  2. Department of Physics, Uppsala University, Uppsala (Sweden)
  3. Technical University Eindhoven, Eindhoven (Netherlands)
Publication Date:
Jul 01, 2004
Product Type:
Conference
Resource Relation:
Conference: 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, Kazimierz Dolny (Poland), 14-17 Jun 2004; Other Information: PBD: 2004; Related Information: In: Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, 257 pages.
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ARSENIDES; DEPTH; DIFFUSION; DOSE-RESPONSE RELATIONSHIPS; GALLIUM COMPOUNDS; HELIUM IONS; HYDROGEN IONS; INDIUM COMPOUNDS; ION IMPLANTATION; KRYPTON IONS; PHOTOLUMINESCENCE; QUANTUM DOTS; SPATIAL DISTRIBUTION; SPECTRAL SHIFT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
OSTI ID:
20616841
Research Organizations:
Maria Curie-Sklodowska Univ., Lublin (Poland); Technical University, Lublin (Poland); Wroclaw University of Technology, Wroclaw (Poland); Association of Polish Electrical Engineers, Lublin (Poland)
Country of Origin:
Poland
Language:
English
Other Identifying Numbers:
TRN: PL0500526060070
Availability:
Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland
Submitting Site:
INIS
Size:
page(s) 74
Announcement Date:
Aug 21, 2005

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Citation Formats

Ahmed, S, Too, P, Tabatabaian, Z, Amirov, K, Larsson, U, Lin, J, and Haq, A. Implantation induced interdiffusion of InGaAs quantum dots - effect of ion species, dose and substrate temperature. Poland: N. p., 2004. Web.
Ahmed, S, Too, P, Tabatabaian, Z, Amirov, K, Larsson, U, Lin, J, & Haq, A. Implantation induced interdiffusion of InGaAs quantum dots - effect of ion species, dose and substrate temperature. Poland.
Ahmed, S, Too, P, Tabatabaian, Z, Amirov, K, Larsson, U, Lin, J, and Haq, A. 2004. "Implantation induced interdiffusion of InGaAs quantum dots - effect of ion species, dose and substrate temperature." Poland.
@misc{etde_20616841,
title = {Implantation induced interdiffusion of InGaAs quantum dots - effect of ion species, dose and substrate temperature}
 author = {Ahmed, S, Too, P, Tabatabaian, Z, Amirov, K, Larsson, U, Lin, J, and Haq, A}
 abstractNote = {No abstract prepared.}
 place = {Poland}
 year = {2004}
 month = {Jul}
 }