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Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion implantation SiC

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Abstract

No abstract prepared.
Authors:
Brauer, G; Anwand, W; Skorupa, W [1] 
  1. Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Dresden (Germany)
Publication Date:
Jul 01, 2004
Product Type:
Conference
Resource Relation:
Conference: 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, Kazimierz Dolny (Poland), 14-17 Jun 2004; Other Information: PBD: 2004; Related Information: In: Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004, 257 pages.
Subject:
36 MATERIALS SCIENCE; ANNEALING; ANNIHILATION; DOPPLER BROADENING; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; POSITRON BEAMS; SILICON CARBIDES; SPECTROSCOPY; TEMPERATURE DEPENDENCE; VACANCIES
OSTI ID:
20616817
Research Organizations:
Maria Curie-Sklodowska Univ., Lublin (Poland); Technical University, Lublin (Poland); Wroclaw University of Technology, Wroclaw (Poland); Association of Polish Electrical Engineers, Lublin (Poland)
Country of Origin:
Poland
Language:
English
Other Identifying Numbers:
TRN: PL0500502060046
Availability:
Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw, Poland
Submitting Site:
INIS
Size:
page(s) 47
Announcement Date:
Aug 21, 2005

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Citation Formats

Brauer, G, Anwand, W, and Skorupa, W. Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion implantation SiC. Poland: N. p., 2004. Web.
Brauer, G, Anwand, W, & Skorupa, W. Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion implantation SiC. Poland.
Brauer, G, Anwand, W, and Skorupa, W. 2004. "Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion implantation SiC." Poland.
@misc{etde_20616817,
title = {Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion implantation SiC}
 author = {Brauer, G, Anwand, W, and Skorupa, W}
 abstractNote = {No abstract prepared.}
 place = {Poland}
 year = {2004}
 month = {Jul}
 }