Abstract
Type P silicon has been compensated by the production of a controlled and uniform amount of donor atoms ({sup 31}P) using thermal neutrons to bring about a nuclear transformation. It is shown that it is possible in this way to reduce by a factor of about one hundred the overall concentration of residual ionised impurities in the purest crystals obtained by floating zone purification (2 x 10{sup 12} atoms/cm{sup 3}). The degree compensation obtained is limited by the initial inhomogeneity of acceptor impurities which have to be compensated. Lattice defects which still remain after prolonged annealings reduce the life-time of the material to about 10 {mu}s approximately. Particle detectors having thicknesses of 2 to 5 mm have been built by this process; they give good results, particularly at low temperatures. A study has also been made of the number and of the nature of lattice defects produced by thermal neutrons in high resistivity P and N type crystals. These defects have been compared to those produced by {gamma} rays from {sup 60}Co. A discussion is given of the validity of the Wertheim model concerning pronounced recombination at low temperatures (77 deg. K - 300 deg. K) of primary defect-interstitial pairs.
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Messier, J
[1]
- Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires
Citation Formats
Messier, J.
Effect of cobalt-60 {gamma} radiation and of thermal neutrons on high resistance P and N silicon. Possibility of obtaining a nuclear compensation for P type silicon; Effects du rayonnement {gamma} du cobalt 60 et de neutrons thermiques sur du silicium P et N de haute resistivite. Possibilite de realiser une compensation nucleaire d'un silicium du type P.
France: N. p.,
1965.
Web.
Messier, J.
Effect of cobalt-60 {gamma} radiation and of thermal neutrons on high resistance P and N silicon. Possibility of obtaining a nuclear compensation for P type silicon; Effects du rayonnement {gamma} du cobalt 60 et de neutrons thermiques sur du silicium P et N de haute resistivite. Possibilite de realiser une compensation nucleaire d'un silicium du type P.
France.
Messier, J.
1965.
"Effect of cobalt-60 {gamma} radiation and of thermal neutrons on high resistance P and N silicon. Possibility of obtaining a nuclear compensation for P type silicon; Effects du rayonnement {gamma} du cobalt 60 et de neutrons thermiques sur du silicium P et N de haute resistivite. Possibilite de realiser une compensation nucleaire d'un silicium du type P."
France.
@misc{etde_20598741,
title = {Effect of cobalt-60 {gamma} radiation and of thermal neutrons on high resistance P and N silicon. Possibility of obtaining a nuclear compensation for P type silicon; Effects du rayonnement {gamma} du cobalt 60 et de neutrons thermiques sur du silicium P et N de haute resistivite. Possibilite de realiser une compensation nucleaire d'un silicium du type P}
author = {Messier, J}
abstractNote = {Type P silicon has been compensated by the production of a controlled and uniform amount of donor atoms ({sup 31}P) using thermal neutrons to bring about a nuclear transformation. It is shown that it is possible in this way to reduce by a factor of about one hundred the overall concentration of residual ionised impurities in the purest crystals obtained by floating zone purification (2 x 10{sup 12} atoms/cm{sup 3}). The degree compensation obtained is limited by the initial inhomogeneity of acceptor impurities which have to be compensated. Lattice defects which still remain after prolonged annealings reduce the life-time of the material to about 10 {mu}s approximately. Particle detectors having thicknesses of 2 to 5 mm have been built by this process; they give good results, particularly at low temperatures. A study has also been made of the number and of the nature of lattice defects produced by thermal neutrons in high resistivity P and N type crystals. These defects have been compared to those produced by {gamma} rays from {sup 60}Co. A discussion is given of the validity of the Wertheim model concerning pronounced recombination at low temperatures (77 deg. K - 300 deg. K) of primary defect-interstitial pairs. The nature of the defects introducing energy levels into the lower half of the forbidden band has been studied. (author) [French] On a compense du silicium de type P en produisant, au moyen de neutrons thermiques, par transmutation nucleaire une quantite controlee et uniforme d'atomes donneurs ({sup 31}P). On montre qu'on peut ainsi reduire de cent fois environ la densite nette d'impuretes ionisees residuelles subsistant dans les cristaux les plus purs obtenus par purification par zone flottante (2.10{sup 12} atomes/cm{sup 3}). Le degre de compensation obtenu est limite par i'inhomogeneite initiale des impuretes acceptrices a compenser. Des defauts de reseau qui subsistent meme apres des recuits prolonges reduisent la duree de vie du materiau a 10 {mu}s environ. Des detecteurs de particules de 2 a 5 mm d'epaisseur ont ete realises par ce procede et donnent, particulierement a basse temperature, de bons resultats. Par ailleurs, on a etudie le nombre et la nature des defauts du reseau produits par les neutrons thermiques dans des cristaux de haute resistivite de types N et P. On les a compares a ceux produits par les rayons {gamma} du {sup 60}Co. On a discute la validite du modele de Wertheim relatif a une recombinaison tres importante a basse temperature (77 deg. K - 300 deg. K) des paires lacune-interstitiel primaires. On a etudie la nature des defauts introduisant des niveaux d'energie dans la moitie inferieure de la bande interdite. (auteur)}
place = {France}
year = {1965}
month = {Nov}
}
title = {Effect of cobalt-60 {gamma} radiation and of thermal neutrons on high resistance P and N silicon. Possibility of obtaining a nuclear compensation for P type silicon; Effects du rayonnement {gamma} du cobalt 60 et de neutrons thermiques sur du silicium P et N de haute resistivite. Possibilite de realiser une compensation nucleaire d'un silicium du type P}
author = {Messier, J}
abstractNote = {Type P silicon has been compensated by the production of a controlled and uniform amount of donor atoms ({sup 31}P) using thermal neutrons to bring about a nuclear transformation. It is shown that it is possible in this way to reduce by a factor of about one hundred the overall concentration of residual ionised impurities in the purest crystals obtained by floating zone purification (2 x 10{sup 12} atoms/cm{sup 3}). The degree compensation obtained is limited by the initial inhomogeneity of acceptor impurities which have to be compensated. Lattice defects which still remain after prolonged annealings reduce the life-time of the material to about 10 {mu}s approximately. Particle detectors having thicknesses of 2 to 5 mm have been built by this process; they give good results, particularly at low temperatures. A study has also been made of the number and of the nature of lattice defects produced by thermal neutrons in high resistivity P and N type crystals. These defects have been compared to those produced by {gamma} rays from {sup 60}Co. A discussion is given of the validity of the Wertheim model concerning pronounced recombination at low temperatures (77 deg. K - 300 deg. K) of primary defect-interstitial pairs. The nature of the defects introducing energy levels into the lower half of the forbidden band has been studied. (author) [French] On a compense du silicium de type P en produisant, au moyen de neutrons thermiques, par transmutation nucleaire une quantite controlee et uniforme d'atomes donneurs ({sup 31}P). On montre qu'on peut ainsi reduire de cent fois environ la densite nette d'impuretes ionisees residuelles subsistant dans les cristaux les plus purs obtenus par purification par zone flottante (2.10{sup 12} atomes/cm{sup 3}). Le degre de compensation obtenu est limite par i'inhomogeneite initiale des impuretes acceptrices a compenser. Des defauts de reseau qui subsistent meme apres des recuits prolonges reduisent la duree de vie du materiau a 10 {mu}s environ. Des detecteurs de particules de 2 a 5 mm d'epaisseur ont ete realises par ce procede et donnent, particulierement a basse temperature, de bons resultats. Par ailleurs, on a etudie le nombre et la nature des defauts du reseau produits par les neutrons thermiques dans des cristaux de haute resistivite de types N et P. On les a compares a ceux produits par les rayons {gamma} du {sup 60}Co. On a discute la validite du modele de Wertheim relatif a une recombinaison tres importante a basse temperature (77 deg. K - 300 deg. K) des paires lacune-interstitiel primaires. On a etudie la nature des defauts introduisant des niveaux d'energie dans la moitie inferieure de la bande interdite. (auteur)}
place = {France}
year = {1965}
month = {Nov}
}