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kp parameters of Wurtzite GaN

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Abstract

No abstract prepared.
Authors:
Shokhovets, S; Gobsch, G; [1]  Ambacher, O [2] 
  1. Inst. of Physics, TU Ilmenau, Ilmenau (Germany)
  2. Center for Micro- and Nanotechnologies, TU Ilmenau, Ilmenau (Germany)
Publication Date:
Jul 01, 2005
Product Type:
Journal Article
Resource Relation:
Journal Name: Verhandlungen der Deutschen Physikalischen Gesellschaft; Journal Volume: 40; Journal Issue: 2; Conference: 2005 annual conference of the German Physical Society (DPG) during the World year of physics: Physics since Albert Einstein, Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein, Berlin (Germany), 4-9 Mar 2005; Other Information: PBD: 2005
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; BAND THEORY; DIELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY-LEVEL TRANSITIONS; EXCITONS; GALLIUM NITRIDES; HAMILTONIANS; HEXAGONAL LATTICES; MATRIX ELEMENTS; OPTICAL PROPERTIES; SELF-CONSISTENT FIELD
OSTI ID:
20595109
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 0420-0195; VDPEAZ; TRN: DE05G7069
Submitting Site:
DE
Size:
page(s) 258
Announcement Date:
Jun 12, 2005

Journal Article:

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Citation Formats

Shokhovets, S, Gobsch, G, and Ambacher, O. kp parameters of Wurtzite GaN. Germany: N. p., 2005. Web.
Shokhovets, S, Gobsch, G, & Ambacher, O. kp parameters of Wurtzite GaN. Germany.
Shokhovets, S, Gobsch, G, and Ambacher, O. 2005. "kp parameters of Wurtzite GaN." Germany.
@misc{etde_20595109,
title = {kp parameters of Wurtzite GaN}
 author = {Shokhovets, S, Gobsch, G, and Ambacher, O}
 abstractNote = {No abstract prepared.}
 journal = []
 issue = {2}
 volume = {40}
 journal type = {AC}
 place = {Germany}
 year = {2005}
 month = {Jul}
 }