Abstract
On the basis of experimental data covering temperature dependencies of photoelectric and thermodynamic properties of silicon containing defects the possible physical mechanisms of defect center transformation in the silicon lattice and of phase transitions are discussed. (author)
Musaeva, L F;
Igamberdiev, Kh T;
Mamadalimov, A T;
Khabibullaev, P K
[1]
- AS RU, Heat Physics Department, Tashkent (Uzbekistan)
Citation Formats
Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, and Khabibullaev, P K.
Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters.
Uzbekistan: N. p.,
2003.
Web.
Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, & Khabibullaev, P K.
Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters.
Uzbekistan.
Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, and Khabibullaev, P K.
2003.
"Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters."
Uzbekistan.
@misc{etde_20574347,
title = {Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters}
author = {Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, and Khabibullaev, P K}
abstractNote = {On the basis of experimental data covering temperature dependencies of photoelectric and thermodynamic properties of silicon containing defects the possible physical mechanisms of defect center transformation in the silicon lattice and of phase transitions are discussed. (author)}
journal = []
issue = {2-3}
volume = {5}
journal type = {AC}
place = {Uzbekistan}
year = {2003}
month = {Sep}
}
title = {Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters}
author = {Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, and Khabibullaev, P K}
abstractNote = {On the basis of experimental data covering temperature dependencies of photoelectric and thermodynamic properties of silicon containing defects the possible physical mechanisms of defect center transformation in the silicon lattice and of phase transitions are discussed. (author)}
journal = []
issue = {2-3}
volume = {5}
journal type = {AC}
place = {Uzbekistan}
year = {2003}
month = {Sep}
}