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Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters

Journal Article:

Abstract

On the basis of experimental data covering temperature dependencies of photoelectric and thermodynamic properties of silicon containing defects the possible physical mechanisms of defect center transformation in the silicon lattice and of phase transitions are discussed. (author)
Authors:
Musaeva, L F; Igamberdiev, Kh T; Mamadalimov, A T; Khabibullaev, P K [1] 
  1. AS RU, Heat Physics Department, Tashkent (Uzbekistan)
Publication Date:
Sep 01, 2003
Product Type:
Journal Article
Resource Relation:
Journal Name: Uzbekiston Fizika Zhurnali; Journal Volume: 5; Journal Issue: 2-3; Other Information: 14 refs., 6 figs; PBD: Sep 2003
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONFIGURATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPED MATERIALS; FERMI LEVEL; FRENKEL DEFECTS; METASTABLE STATES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE
OSTI ID:
20574347
Country of Origin:
Uzbekistan
Language:
English
Other Identifying Numbers:
Journal ID: ISSN 1025-8817; UFZHEX; TRN: UZ0502454026232
Submitting Site:
INIS
Size:
page(s) 164-170
Announcement Date:
Apr 17, 2005

Journal Article:

Citation Formats

Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, and Khabibullaev, P K. Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters. Uzbekistan: N. p., 2003. Web.
Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, & Khabibullaev, P K. Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters. Uzbekistan.
Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, and Khabibullaev, P K. 2003. "Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters." Uzbekistan.
@misc{etde_20574347,
title = {Bistable impurity centers in silicon. Temperature dependent characteristics of electro- and thermophysical parameters}
author = {Musaeva, L F, Igamberdiev, Kh T, Mamadalimov, A T, and Khabibullaev, P K}
abstractNote = {On the basis of experimental data covering temperature dependencies of photoelectric and thermodynamic properties of silicon containing defects the possible physical mechanisms of defect center transformation in the silicon lattice and of phase transitions are discussed. (author)}
journal = {Uzbekiston Fizika Zhurnali}
issue = {2-3}
volume = {5}
journal type = {AC}
place = {Uzbekistan}
year = {2003}
month = {Sep}
}