Abstract
This work studies the possibility of using high atomic number compound semiconductors, like lead telluride and cadmium telluride as to realize nuclear radiation detectors, specially in gamma ray spectrometry because of their high absorption coefficient. The problems related to the preparation of binary compounds are exposed. Experiments on PbTe show the influence of the conditions of preparation on the electrical properties of the semiconductor which are greatly dependent on the stoichiometry of the compound. PbTe surface-barrier diodes were realized and have been used to study the surface properties of this semiconductor. These diodes cannot detect nuclear radiations because of the too weak resistivity of our material. Different types of devices made of Cd Te have been studied. One of these diodes has been used as an alpha particle detector. We explain the relative poor performances of that detector by the presence of lattice defects in Cd Te where charge carriers may recombine themselves. By analysing the properties of gold diffused Cd Te diodes we identified this defect, the cadmium vacancy, the presence of which is due to the deviation from stoichiometry during the preparation of the material. (author) [French] Ce travail etudie la possibilite d'utiliser des semiconducteurs composes d'elements a
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Lancon, R
[1]
- Commissariat a l'Energie Atomique, Grenoble (France). Centre d'Etudes Nucleaires
Citation Formats
Lancon, R.
Preparation and study of the properties of lead telluride and cadmium telluride diodes for use in nuclear spectrometry; Preparation et etude des proprietes de diodes au tellurure de plomb et au tellurure de cadmium en vue d'une utilisation en spectrometrie nucleaire.
France: N. p.,
1969.
Web.
Lancon, R.
Preparation and study of the properties of lead telluride and cadmium telluride diodes for use in nuclear spectrometry; Preparation et etude des proprietes de diodes au tellurure de plomb et au tellurure de cadmium en vue d'une utilisation en spectrometrie nucleaire.
France.
Lancon, R.
1969.
"Preparation and study of the properties of lead telluride and cadmium telluride diodes for use in nuclear spectrometry; Preparation et etude des proprietes de diodes au tellurure de plomb et au tellurure de cadmium en vue d'une utilisation en spectrometrie nucleaire."
France.
@misc{etde_20552662,
title = {Preparation and study of the properties of lead telluride and cadmium telluride diodes for use in nuclear spectrometry; Preparation et etude des proprietes de diodes au tellurure de plomb et au tellurure de cadmium en vue d'une utilisation en spectrometrie nucleaire}
author = {Lancon, R}
abstractNote = {This work studies the possibility of using high atomic number compound semiconductors, like lead telluride and cadmium telluride as to realize nuclear radiation detectors, specially in gamma ray spectrometry because of their high absorption coefficient. The problems related to the preparation of binary compounds are exposed. Experiments on PbTe show the influence of the conditions of preparation on the electrical properties of the semiconductor which are greatly dependent on the stoichiometry of the compound. PbTe surface-barrier diodes were realized and have been used to study the surface properties of this semiconductor. These diodes cannot detect nuclear radiations because of the too weak resistivity of our material. Different types of devices made of Cd Te have been studied. One of these diodes has been used as an alpha particle detector. We explain the relative poor performances of that detector by the presence of lattice defects in Cd Te where charge carriers may recombine themselves. By analysing the properties of gold diffused Cd Te diodes we identified this defect, the cadmium vacancy, the presence of which is due to the deviation from stoichiometry during the preparation of the material. (author) [French] Ce travail etudie la possibilite d'utiliser des semiconducteurs composes d'elements a numero atomique eleve, tels que le tellurure de plomb et le tellurure de cadmium pour la realisation de detecteurs de rayonnements nucleaires, grace notamment a la section efficace de capture elevee qu'ils presentent vis-a-vis des rayons gamma. On souligne les problemes relatifs a la preparation des composes binaires. Les experiences realisees sur PbTe mettent en evidence l'influence des conditions de preparation sur les proprietes electriques du semiconducteur qui dependent fortement de la stoechiometrie du compose. Nous avons realise des diodes au PbTe a barriere de surface qui ont permis de preciser les proprietes de surface de ce semiconducteur. La trop faible resistivite de notre materiau nous empeche de l'utiliser en detection de rayonnements nucleaires. Differents types de structures a base de CdTe ont ete etudiees. L'une des diodes realisees a permis la detection de particules alpha. Les performances limitees de ce detecteur sont expliquees par la presence dans CdTe de defauts de reseau jouant le role de centres de recombinaison des porteurs de charge. L'analyse des proprietes de diodes realisees par diffusion d'or dans CdTe a permis d'identifier ce defaut, la lacune de cadmium, dont la presence est due a un ecart a la stoechiometrie lors de la preparation du materiau. (auteur)}
place = {France}
year = {1969}
month = {Jul}
}
title = {Preparation and study of the properties of lead telluride and cadmium telluride diodes for use in nuclear spectrometry; Preparation et etude des proprietes de diodes au tellurure de plomb et au tellurure de cadmium en vue d'une utilisation en spectrometrie nucleaire}
author = {Lancon, R}
abstractNote = {This work studies the possibility of using high atomic number compound semiconductors, like lead telluride and cadmium telluride as to realize nuclear radiation detectors, specially in gamma ray spectrometry because of their high absorption coefficient. The problems related to the preparation of binary compounds are exposed. Experiments on PbTe show the influence of the conditions of preparation on the electrical properties of the semiconductor which are greatly dependent on the stoichiometry of the compound. PbTe surface-barrier diodes were realized and have been used to study the surface properties of this semiconductor. These diodes cannot detect nuclear radiations because of the too weak resistivity of our material. Different types of devices made of Cd Te have been studied. One of these diodes has been used as an alpha particle detector. We explain the relative poor performances of that detector by the presence of lattice defects in Cd Te where charge carriers may recombine themselves. By analysing the properties of gold diffused Cd Te diodes we identified this defect, the cadmium vacancy, the presence of which is due to the deviation from stoichiometry during the preparation of the material. (author) [French] Ce travail etudie la possibilite d'utiliser des semiconducteurs composes d'elements a numero atomique eleve, tels que le tellurure de plomb et le tellurure de cadmium pour la realisation de detecteurs de rayonnements nucleaires, grace notamment a la section efficace de capture elevee qu'ils presentent vis-a-vis des rayons gamma. On souligne les problemes relatifs a la preparation des composes binaires. Les experiences realisees sur PbTe mettent en evidence l'influence des conditions de preparation sur les proprietes electriques du semiconducteur qui dependent fortement de la stoechiometrie du compose. Nous avons realise des diodes au PbTe a barriere de surface qui ont permis de preciser les proprietes de surface de ce semiconducteur. La trop faible resistivite de notre materiau nous empeche de l'utiliser en detection de rayonnements nucleaires. Differents types de structures a base de CdTe ont ete etudiees. L'une des diodes realisees a permis la detection de particules alpha. Les performances limitees de ce detecteur sont expliquees par la presence dans CdTe de defauts de reseau jouant le role de centres de recombinaison des porteurs de charge. L'analyse des proprietes de diodes realisees par diffusion d'or dans CdTe a permis d'identifier ce defaut, la lacune de cadmium, dont la presence est due a un ecart a la stoechiometrie lors de la preparation du materiau. (auteur)}
place = {France}
year = {1969}
month = {Jul}
}