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Contribution to the study of fluctuations in transistors (bipolar and junction field effect types); Contribution a l'etude des fluctuations dans les transistors (bipolaires et a effet champ a jonctions)

Abstract

A brief review of the basic theory of fluctuations in semiconductors is given: shot, thermal low frequency noise. A measuring set has been built to draw noise spectrums (current or voltage). Noise parameters of bipolar transistors are given, mainly noise voltage. Noise current, noise factor and correlation between noise sources are also calculated. Measurements of noise parameters fit well with theory for various devices made in different technologies: alloyed, mesa, planar. Then we give results of the calculation of noise parameters in a FET starting from a simplified model of the device. Low frequency noise is taken into account. Measurements of the parameters and of the spectrum agree fairly well with the theory. Studies of low frequency noise versus temperature give the density and energy of traps located in the space charge layers and an idea of the impurity encountered in these space charge layers. [French] On rappelle les notions de base de la theorie des fluctuations dans les semiconducteurs: bruit de grenaille, bruit thermique, bruit basse frequence. Un appareillage mis au point pour tracer un spectre de bruit est decrit. On presente ensuite le calcul des parametres de bruit d'un transistor bipolaire en insistant plus particulierement sur la tension  More>>
Authors:
Borel, J [1] 
  1. Commissariat a l'Energie Atomique, Grenoble (France). Centre d'Etudes Nucleaires
Publication Date:
Jul 01, 1970
Product Type:
Thesis/Dissertation
Report Number:
CEA-R-3817
Resource Relation:
Other Information: TH: These Docteur Es sciances physiques; 51 refs; PBD: 1970
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BACKGROUND NOISE; FIELD EFFECT TRANSISTORS; FLUCTUATIONS; IMPURITIES; JUNCTION TRANSISTORS; STATISTICAL MECHANICS; TEMPERATURE DEPENDENCE
OSTI ID:
20552650
Research Organizations:
CEA Grenoble, 38 (France); Faculte des Sciences de l'Universite de Grenoble, 38 (France)
Country of Origin:
France
Language:
French
Other Identifying Numbers:
TRN: FR04R3817007907
Availability:
Available from INIS in electronic form
Submitting Site:
FRN
Size:
109 pages
Announcement Date:
Feb 20, 2005

Citation Formats

Borel, J. Contribution to the study of fluctuations in transistors (bipolar and junction field effect types); Contribution a l'etude des fluctuations dans les transistors (bipolaires et a effet champ a jonctions). France: N. p., 1970. Web.
Borel, J. Contribution to the study of fluctuations in transistors (bipolar and junction field effect types); Contribution a l'etude des fluctuations dans les transistors (bipolaires et a effet champ a jonctions). France.
Borel, J. 1970. "Contribution to the study of fluctuations in transistors (bipolar and junction field effect types); Contribution a l'etude des fluctuations dans les transistors (bipolaires et a effet champ a jonctions)." France.
@misc{etde_20552650,
title = {Contribution to the study of fluctuations in transistors (bipolar and junction field effect types); Contribution a l'etude des fluctuations dans les transistors (bipolaires et a effet champ a jonctions)}
author = {Borel, J}
abstractNote = {A brief review of the basic theory of fluctuations in semiconductors is given: shot, thermal low frequency noise. A measuring set has been built to draw noise spectrums (current or voltage). Noise parameters of bipolar transistors are given, mainly noise voltage. Noise current, noise factor and correlation between noise sources are also calculated. Measurements of noise parameters fit well with theory for various devices made in different technologies: alloyed, mesa, planar. Then we give results of the calculation of noise parameters in a FET starting from a simplified model of the device. Low frequency noise is taken into account. Measurements of the parameters and of the spectrum agree fairly well with the theory. Studies of low frequency noise versus temperature give the density and energy of traps located in the space charge layers and an idea of the impurity encountered in these space charge layers. [French] On rappelle les notions de base de la theorie des fluctuations dans les semiconducteurs: bruit de grenaille, bruit thermique, bruit basse frequence. Un appareillage mis au point pour tracer un spectre de bruit est decrit. On presente ensuite le calcul des parametres de bruit d'un transistor bipolaire en insistant plus particulierement sur la tension de bruit ramenee a l'entree de l'element. Le courant de bruit, le facteur de bruit et la correlation entre les sources de bruit sont calcules. La mesure des parametres de bruit est faite sur divers elements realises dans diverses technologies: alliee, mesa et plane. Les mesures confirment tres bien la theorie. On presente ensuite le calcul des parametres de bruit d'un transistor a effet de champ en definissant un schema equivalent simple de l'element. Le calcul theorique des fluctuations basse frequence est aussi fait. La mesure du spectre de bruit confirme tres bien les calculs theoriques. L'etude du bruit basse frequence en fonction de la temperature permet de remonter a la densite et a l'energie des pieges dans les zones de charge d'espace des diodes. On a ainsi une idee de la nature des impuretes qui sont a l'origine de ces fluctuations. (auteur)}
place = {France}
year = {1970}
month = {Jul}
}