Abstract
Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass.
Carmody, C;
Tan, H H;
Jagadish, C;
Douheret, O;
Maknys, K;
Anand, S;
Zou, J;
Dao, L;
Gal, M;
[1]
Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), ELECTRUM 229, S-16440 KISTA (Sweden);
Division of Materials and Centre for Microscopy and Microanalysis, University of Queensland, QLD 4076 (Australia);
Australian Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW, 2006 (Australia);
School of Physics, University of New South Wales, Sydney, NSW, 2052 (Australia)]
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200 (Australia)
Citation Formats
Carmody, C, Tan, H H, Jagadish, C, Douheret, O, Maknys, K, Anand, S, Zou, J, Dao, L, Gal, M, Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), ELECTRUM 229, S-16440 KISTA (Sweden), Division of Materials and Centre for Microscopy and Microanalysis, University of Queensland, QLD 4076 (Australia), Australian Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW, 2006 (Australia), and School of Physics, University of New South Wales, Sydney, NSW, 2052 (Australia)].
Structural, electrical, and optical analysis of ion implanted semi-insulating InP.
United States: N. p.,
2004.
Web.
doi:10.1063/1.1633349.
Carmody, C, Tan, H H, Jagadish, C, Douheret, O, Maknys, K, Anand, S, Zou, J, Dao, L, Gal, M, Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), ELECTRUM 229, S-16440 KISTA (Sweden), Division of Materials and Centre for Microscopy and Microanalysis, University of Queensland, QLD 4076 (Australia), Australian Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW, 2006 (Australia), & School of Physics, University of New South Wales, Sydney, NSW, 2052 (Australia)].
Structural, electrical, and optical analysis of ion implanted semi-insulating InP.
United States.
https://doi.org/10.1063/1.1633349
Carmody, C, Tan, H H, Jagadish, C, Douheret, O, Maknys, K, Anand, S, Zou, J, Dao, L, Gal, M, Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), ELECTRUM 229, S-16440 KISTA (Sweden), Division of Materials and Centre for Microscopy and Microanalysis, University of Queensland, QLD 4076 (Australia), Australian Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW, 2006 (Australia), and School of Physics, University of New South Wales, Sydney, NSW, 2052 (Australia)].
2004.
"Structural, electrical, and optical analysis of ion implanted semi-insulating InP."
United States.
https://doi.org/10.1063/1.1633349.
@misc{etde_20550759,
title = {Structural, electrical, and optical analysis of ion implanted semi-insulating InP}
author = {Carmody, C, Tan, H H, Jagadish, C, Douheret, O, Maknys, K, Anand, S, Zou, J, Dao, L, Gal, M, Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), ELECTRUM 229, S-16440 KISTA (Sweden), Division of Materials and Centre for Microscopy and Microanalysis, University of Queensland, QLD 4076 (Australia), Australian Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW, 2006 (Australia), and School of Physics, University of New South Wales, Sydney, NSW, 2052 (Australia)]}
abstractNote = {Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass.}
doi = {10.1063/1.1633349}
journal = []
issue = {2}
volume = {95}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jan}
}
title = {Structural, electrical, and optical analysis of ion implanted semi-insulating InP}
author = {Carmody, C, Tan, H H, Jagadish, C, Douheret, O, Maknys, K, Anand, S, Zou, J, Dao, L, Gal, M, Department of Microelectronics and Information Technology (IMIT), Royal Institute of Technology (KTH), ELECTRUM 229, S-16440 KISTA (Sweden), Division of Materials and Centre for Microscopy and Microanalysis, University of Queensland, QLD 4076 (Australia), Australian Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW, 2006 (Australia), and School of Physics, University of New South Wales, Sydney, NSW, 2052 (Australia)]}
abstractNote = {Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass.}
doi = {10.1063/1.1633349}
journal = []
issue = {2}
volume = {95}
journal type = {AC}
place = {United States}
year = {2004}
month = {Jan}
}