Abstract
We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various
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Barraud, A
[1]
- Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires
Citation Formats
Barraud, A.
Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite.
France: N. p.,
1968.
Web.
Barraud, A.
Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite.
France.
Barraud, A.
1968.
"Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite."
France.
@misc{etde_20523318,
title = {Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite}
author = {Barraud, A}
abstractNote = {We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [French] Nous avons mis en evidence et etudie des oscillations de courant qui se produisent a champ electrique eleve dans l'arseniure de gallium de haute resistivite. Nous montrons que ces oscillations sont associees a la progression lente d'un domaine de fort champ electrique a travers tout l'echantillon. L'etude experimentale des proprietes de ces instabilites nous a permis de differencier ce phenomene de l'effet Gunn, des effets acoustoelectriques et des effets de contacts. Nous proposons pour rendre compte de ce type d'instabilites un mecanisme de piegeage differentiel sur des impuretes repulsives, capable de depeupler la bande de conduction a champ electrique eleve et de donner naissance a un domaine de champ intense. Le developpement qualitatif de ce modele nous permet de rendre compte de toutes les proprietes des cristaux d'arseniure de gallium de haute resistivite soumis a un champ electrique eleve: augmentation de la constante de Hall, existence d'un seuil de tension pour ces oscillations, formation de domaines de champ intense, lenteur de la propagation de ces domaines, enfin possibilite de renverser le sens de la propagation du domaine sans detruire celui-ci. Le developpement quantitatif du modele permet de calculer les differentes grandeurs caracteristiques de ces instabilites. La comparaison avec l'experience montre une bonne concordance, les legeres divergences provenant surtout de la meconnaissance actuelle des proprietes de transport dans l'arseniure de gallium aux champs electriques eleves. A la lumiere de ce modele, il apparait que le phenomene d'instabilite etudie peut se produire pour une gamme etendue de concentrations en centres repulsifs, et pour toute une gamme de resistivites. Ceci explique qu'il apparaisse systematiquement dans l'arseniure de gallium de moyenne et haute resistivite. (auteurs)}
place = {France}
year = {1968}
month = {Jul}
}
title = {Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite}
author = {Barraud, A}
abstractNote = {We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [French] Nous avons mis en evidence et etudie des oscillations de courant qui se produisent a champ electrique eleve dans l'arseniure de gallium de haute resistivite. Nous montrons que ces oscillations sont associees a la progression lente d'un domaine de fort champ electrique a travers tout l'echantillon. L'etude experimentale des proprietes de ces instabilites nous a permis de differencier ce phenomene de l'effet Gunn, des effets acoustoelectriques et des effets de contacts. Nous proposons pour rendre compte de ce type d'instabilites un mecanisme de piegeage differentiel sur des impuretes repulsives, capable de depeupler la bande de conduction a champ electrique eleve et de donner naissance a un domaine de champ intense. Le developpement qualitatif de ce modele nous permet de rendre compte de toutes les proprietes des cristaux d'arseniure de gallium de haute resistivite soumis a un champ electrique eleve: augmentation de la constante de Hall, existence d'un seuil de tension pour ces oscillations, formation de domaines de champ intense, lenteur de la propagation de ces domaines, enfin possibilite de renverser le sens de la propagation du domaine sans detruire celui-ci. Le developpement quantitatif du modele permet de calculer les differentes grandeurs caracteristiques de ces instabilites. La comparaison avec l'experience montre une bonne concordance, les legeres divergences provenant surtout de la meconnaissance actuelle des proprietes de transport dans l'arseniure de gallium aux champs electriques eleves. A la lumiere de ce modele, il apparait que le phenomene d'instabilite etudie peut se produire pour une gamme etendue de concentrations en centres repulsifs, et pour toute une gamme de resistivites. Ceci explique qu'il apparaisse systematiquement dans l'arseniure de gallium de moyenne et haute resistivite. (auteurs)}
place = {France}
year = {1968}
month = {Jul}
}