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Development of a diffuse element matrix in 'planar' technology. A particular application: logical gate with coupled emitter; Etude et realisation d'une matrice d'elements diffuses selon la technologie 'planar'. Application particuliere: porte logique a emetteurs couples

Abstract

In a first part, after a brief recall concerning 'planar' technology we discuss the various parasitic elements associated with integrated circuits components. Mathematical formulae of these elements are derived. In a second part, we present a matrix of 22 transistors and 12 resistors which has been realized. This matrix enables the integration of the major part of nuclear circuits. Some of the obtained circuits are shown, particularly an emitter coupled logic gate which presents good electrical behaviour. (author) [French] Dans uns premiere partie, apres un bref rappel de la technologie 'planar' nous etudions les divers elements parasites associes a tout composant d'un circuit integre. Un developpement sommaire des expressions mathematiques de ces elements est propose. Dans une seconde partie nous presentons la matrice de 22 transistors et 12 resistances que nous avons realisee. Cette matrice repond aux principaux besoins de l'electronique nucleaire. Nous proposons ensuite quelques exemples de circuits realises a partir de cette matrice dont notamment une porte logique a emetteurs couples de performances tres interessantes. (auteur)
Authors:
Rousseau, P [1] 
  1. Commissariat a l'Energie Atomique, 38 - Grenoble (France). Centre d'Etudes Nucleaires
Publication Date:
Jun 01, 1967
Product Type:
Thesis/Dissertation
Report Number:
CEA-R-3422
Resource Relation:
Other Information: TH: These docteur-ingenieur; 77 refs; PBD: Jun 1967
Subject:
36 MATERIALS SCIENCE; CAPACITORS; DIFFUSION; ELECTRICAL INSULATION; EPITAXY; ETCHING; GATING CIRCUITS; IMPURITIES; INTEGRATED CIRCUITS; MINIATURIZATION; NUMERICAL ANALYSIS; OXIDATION; P-N JUNCTIONS; RESISTORS; SILICON OXIDES; SURFACE COATING; TECHNOLOGY UTILIZATION
OSTI ID:
20523244
Research Organizations:
CEA Saclay, 91 - Gif-sur-Yvette (France); Faculte des Sciences de l'Universite de Grenoble, 38 (France)
Country of Origin:
France
Language:
French
Other Identifying Numbers:
TRN: FR04R3422091299
Availability:
Available from INIS in electronic form
Submitting Site:
FRN
Size:
[186] pages
Announcement Date:
May 29, 2005

Citation Formats

Rousseau, P. Development of a diffuse element matrix in 'planar' technology. A particular application: logical gate with coupled emitter; Etude et realisation d'une matrice d'elements diffuses selon la technologie 'planar'. Application particuliere: porte logique a emetteurs couples. France: N. p., 1967. Web.
Rousseau, P. Development of a diffuse element matrix in 'planar' technology. A particular application: logical gate with coupled emitter; Etude et realisation d'une matrice d'elements diffuses selon la technologie 'planar'. Application particuliere: porte logique a emetteurs couples. France.
Rousseau, P. 1967. "Development of a diffuse element matrix in 'planar' technology. A particular application: logical gate with coupled emitter; Etude et realisation d'une matrice d'elements diffuses selon la technologie 'planar'. Application particuliere: porte logique a emetteurs couples." France.
@misc{etde_20523244,
title = {Development of a diffuse element matrix in 'planar' technology. A particular application: logical gate with coupled emitter; Etude et realisation d'une matrice d'elements diffuses selon la technologie 'planar'. Application particuliere: porte logique a emetteurs couples}
author = {Rousseau, P}
abstractNote = {In a first part, after a brief recall concerning 'planar' technology we discuss the various parasitic elements associated with integrated circuits components. Mathematical formulae of these elements are derived. In a second part, we present a matrix of 22 transistors and 12 resistors which has been realized. This matrix enables the integration of the major part of nuclear circuits. Some of the obtained circuits are shown, particularly an emitter coupled logic gate which presents good electrical behaviour. (author) [French] Dans uns premiere partie, apres un bref rappel de la technologie 'planar' nous etudions les divers elements parasites associes a tout composant d'un circuit integre. Un developpement sommaire des expressions mathematiques de ces elements est propose. Dans une seconde partie nous presentons la matrice de 22 transistors et 12 resistances que nous avons realisee. Cette matrice repond aux principaux besoins de l'electronique nucleaire. Nous proposons ensuite quelques exemples de circuits realises a partir de cette matrice dont notamment une porte logique a emetteurs couples de performances tres interessantes. (auteur)}
place = {France}
year = {1967}
month = {Jun}
}