Abstract
Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 deg. C yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation and imply that the heat release upon structural relaxation should be implant-condition dependent.
Glover, C J;
Ridgway, M C;
Yu, K M;
Foran, G J;
Desnica-Frankovic, D;
Clerc, C;
Hansen, J L;
Nylandsted-Larsen, A;
[1]
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States);
Australian Nuclear Science and Technology Organisation, Menai (Australia);
Physics Department, Rudjer Boskovic Institute, Zagreb (Croatia);
Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National de la Recherche Scientifique, Orsay (France);
Institute of Physics and Astronomy, Aarhus University, Aarhus (Denmark)]
- Department of Electronic Materials Engineering, Australian National University, Canberra (Australia)
Citation Formats
Glover, C J, Ridgway, M C, Yu, K M, Foran, G J, Desnica-Frankovic, D, Clerc, C, Hansen, J L, Nylandsted-Larsen, A, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States), Australian Nuclear Science and Technology Organisation, Menai (Australia), Physics Department, Rudjer Boskovic Institute, Zagreb (Croatia), Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National de la Recherche Scientifique, Orsay (France), and Institute of Physics and Astronomy, Aarhus University, Aarhus (Denmark)].
Structural-relaxation-induced bond length and bond angle changes in amorphized Ge.
United States: N. p.,
2001.
Web.
doi:10.1103/PhysRevB.63.073204.
Glover, C J, Ridgway, M C, Yu, K M, Foran, G J, Desnica-Frankovic, D, Clerc, C, Hansen, J L, Nylandsted-Larsen, A, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States), Australian Nuclear Science and Technology Organisation, Menai (Australia), Physics Department, Rudjer Boskovic Institute, Zagreb (Croatia), Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National de la Recherche Scientifique, Orsay (France), & Institute of Physics and Astronomy, Aarhus University, Aarhus (Denmark)].
Structural-relaxation-induced bond length and bond angle changes in amorphized Ge.
United States.
https://doi.org/10.1103/PhysRevB.63.073204
Glover, C J, Ridgway, M C, Yu, K M, Foran, G J, Desnica-Frankovic, D, Clerc, C, Hansen, J L, Nylandsted-Larsen, A, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States), Australian Nuclear Science and Technology Organisation, Menai (Australia), Physics Department, Rudjer Boskovic Institute, Zagreb (Croatia), Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National de la Recherche Scientifique, Orsay (France), and Institute of Physics and Astronomy, Aarhus University, Aarhus (Denmark)].
2001.
"Structural-relaxation-induced bond length and bond angle changes in amorphized Ge."
United States.
https://doi.org/10.1103/PhysRevB.63.073204.
@misc{etde_20522648,
title = {Structural-relaxation-induced bond length and bond angle changes in amorphized Ge}
author = {Glover, C J, Ridgway, M C, Yu, K M, Foran, G J, Desnica-Frankovic, D, Clerc, C, Hansen, J L, Nylandsted-Larsen, A, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States), Australian Nuclear Science and Technology Organisation, Menai (Australia), Physics Department, Rudjer Boskovic Institute, Zagreb (Croatia), Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National de la Recherche Scientifique, Orsay (France), and Institute of Physics and Astronomy, Aarhus University, Aarhus (Denmark)]}
abstractNote = {Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 deg. C yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation and imply that the heat release upon structural relaxation should be implant-condition dependent.}
doi = {10.1103/PhysRevB.63.073204}
journal = []
issue = {7}
volume = {63}
journal type = {AC}
place = {United States}
year = {2001}
month = {Feb}
}
title = {Structural-relaxation-induced bond length and bond angle changes in amorphized Ge}
author = {Glover, C J, Ridgway, M C, Yu, K M, Foran, G J, Desnica-Frankovic, D, Clerc, C, Hansen, J L, Nylandsted-Larsen, A, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States), Australian Nuclear Science and Technology Organisation, Menai (Australia), Physics Department, Rudjer Boskovic Institute, Zagreb (Croatia), Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National de la Recherche Scientifique, Orsay (France), and Institute of Physics and Astronomy, Aarhus University, Aarhus (Denmark)]}
abstractNote = {Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 deg. C yielded a common ion-dose-independent interatomic distance distribution. The heat release upon structural relaxation due to reductions in both bond length and bond angle distortion was calculated separately and the former exhibited an ion-dose dependence. The results provide compelling support for the defect annihilation model of structural relaxation and imply that the heat release upon structural relaxation should be implant-condition dependent.}
doi = {10.1103/PhysRevB.63.073204}
journal = []
issue = {7}
volume = {63}
journal type = {AC}
place = {United States}
year = {2001}
month = {Feb}
}