Abstract
Sulfur (S)-doped titanium dioxide (TiO{sub 2}) was synthesized by ion implantation and subsequent thermal annealing. The S ions were implanted into the single crystals of rutile TiO{sub 2} at a fluence of 8x10{sup 15} ions/cm{sup 2}. According to the results of Rutherford backscattering spectroscopy and ion channeling analysis, the irradiation damage recovered by annealing at 600 deg. C in air. In the annealed crystal, the S atoms occupied oxygen sites for form Ti-S bonds, as confirmed by x-ray photoelectron spectroscopy. Compared to the pure TiO{sub 2}, a photocurrent was observed in the lower-energy regions for the S-doped TiO{sub 2}. Based on the theoretical analyses by the first-principles band calculations using the full potential linearized augmented plane-wave methods within the generalized gradient approximation, the mixing of the S 3p states with the valence band (VB) was found to contribute to the increasing width of the VB. This leads to the band gap narrowing in the S-doped TiO{sub 2}. Therefore, the photon-to-carrier conversion was induced during irradiation by visible light above 420 nm (<2.9 eV)
Umebayashi, T;
Yamaki, T;
Yamamoto, S;
Miyashita, A;
Tanaka, S;
Sumita, T;
Asai, K;
[1]
Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan);
Technology Research Department, National Space Development Agency of Japan (NASDA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan);
Department of Quantum Engineering and Systems Science, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)]
- Department of Quantum Engineering and Systems Science, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Citation Formats
Umebayashi, T, Yamaki, T, Yamamoto, S, Miyashita, A, Tanaka, S, Sumita, T, Asai, K, Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan), Technology Research Department, National Space Development Agency of Japan (NASDA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan), and Department of Quantum Engineering and Systems Science, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)].
Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies.
United States: N. p.,
2003.
Web.
doi:10.1063/1.1565693.
Umebayashi, T, Yamaki, T, Yamamoto, S, Miyashita, A, Tanaka, S, Sumita, T, Asai, K, Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan), Technology Research Department, National Space Development Agency of Japan (NASDA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan), & Department of Quantum Engineering and Systems Science, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)].
Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies.
United States.
https://doi.org/10.1063/1.1565693
Umebayashi, T, Yamaki, T, Yamamoto, S, Miyashita, A, Tanaka, S, Sumita, T, Asai, K, Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan), Technology Research Department, National Space Development Agency of Japan (NASDA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan), and Department of Quantum Engineering and Systems Science, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)].
2003.
"Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies."
United States.
https://doi.org/10.1063/1.1565693.
@misc{etde_20417275,
title = {Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies}
author = {Umebayashi, T, Yamaki, T, Yamamoto, S, Miyashita, A, Tanaka, S, Sumita, T, Asai, K, Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan), Technology Research Department, National Space Development Agency of Japan (NASDA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan), and Department of Quantum Engineering and Systems Science, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)]}
abstractNote = {Sulfur (S)-doped titanium dioxide (TiO{sub 2}) was synthesized by ion implantation and subsequent thermal annealing. The S ions were implanted into the single crystals of rutile TiO{sub 2} at a fluence of 8x10{sup 15} ions/cm{sup 2}. According to the results of Rutherford backscattering spectroscopy and ion channeling analysis, the irradiation damage recovered by annealing at 600 deg. C in air. In the annealed crystal, the S atoms occupied oxygen sites for form Ti-S bonds, as confirmed by x-ray photoelectron spectroscopy. Compared to the pure TiO{sub 2}, a photocurrent was observed in the lower-energy regions for the S-doped TiO{sub 2}. Based on the theoretical analyses by the first-principles band calculations using the full potential linearized augmented plane-wave methods within the generalized gradient approximation, the mixing of the S 3p states with the valence band (VB) was found to contribute to the increasing width of the VB. This leads to the band gap narrowing in the S-doped TiO{sub 2}. Therefore, the photon-to-carrier conversion was induced during irradiation by visible light above 420 nm (<2.9 eV)}
doi = {10.1063/1.1565693}
journal = []
issue = {9}
volume = {93}
journal type = {AC}
place = {United States}
year = {2003}
month = {May}
}
title = {Sulfur-doping of rutile-titanium dioxide by ion implantation: Photocurrent spectroscopy and first-principles band calculation studies}
author = {Umebayashi, T, Yamaki, T, Yamamoto, S, Miyashita, A, Tanaka, S, Sumita, T, Asai, K, Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan), Technology Research Department, National Space Development Agency of Japan (NASDA), 2-1-1 Sengen, Tsukuba, Ibaraki 305-8505 (Japan), and Department of Quantum Engineering and Systems Science, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)]}
abstractNote = {Sulfur (S)-doped titanium dioxide (TiO{sub 2}) was synthesized by ion implantation and subsequent thermal annealing. The S ions were implanted into the single crystals of rutile TiO{sub 2} at a fluence of 8x10{sup 15} ions/cm{sup 2}. According to the results of Rutherford backscattering spectroscopy and ion channeling analysis, the irradiation damage recovered by annealing at 600 deg. C in air. In the annealed crystal, the S atoms occupied oxygen sites for form Ti-S bonds, as confirmed by x-ray photoelectron spectroscopy. Compared to the pure TiO{sub 2}, a photocurrent was observed in the lower-energy regions for the S-doped TiO{sub 2}. Based on the theoretical analyses by the first-principles band calculations using the full potential linearized augmented plane-wave methods within the generalized gradient approximation, the mixing of the S 3p states with the valence band (VB) was found to contribute to the increasing width of the VB. This leads to the band gap narrowing in the S-doped TiO{sub 2}. Therefore, the photon-to-carrier conversion was induced during irradiation by visible light above 420 nm (<2.9 eV)}
doi = {10.1063/1.1565693}
journal = []
issue = {9}
volume = {93}
journal type = {AC}
place = {United States}
year = {2003}
month = {May}
}