Abstract
Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.
Citation Formats
Cohen, M, and David, J P.
Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS).
France: N. p.,
1999.
Web.
Cohen, M, & David, J P.
Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS).
France.
Cohen, M, and David, J P.
1999.
"Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)."
France.
@misc{etde_20403459,
title = {Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)}
author = {Cohen, M, and David, J P}
abstractNote = {Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.}
place = {France}
year = {1999}
month = {Jul}
}
title = {Radiation effects on active pixel sensors (APS); Effets de l'irradiation sur les capteurs a pixels actifs (APS)}
author = {Cohen, M, and David, J P}
abstractNote = {Active pixel sensor (APS) is a new generation of image sensors which presents several advantages relatively to charge coupled devices (CCDs) particularly for space applications (APS requires only 1 voltage to operate which reduces considerably current consumption). Irradiation was performed using {sup 60}Co gamma radiation at room temperature and at a dose rate of 150 Gy(Si)/h. 2 types of APS have been tested: photodiode-APS and photoMOS-APS. The results show that photoMOS-APS is more sensitive to radiation effects than photodiode-APS. Important parameters of image sensors like dark currents increase sharply with dose levels. Nevertheless photodiode-APS sensitivity is one hundred time lower than photoMOS-APS sensitivity.}
place = {France}
year = {1999}
month = {Jul}
}