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Fiscal 2000 achievement report. Research and development of fast-acting innovative energy-environment technology (Development of fast-acting high-efficiency solar cell technology - Development of high-quality ingot manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko itaku kenkyu gyomu seika hokokusho. Sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu (Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu - Kohinshitsu ingot seizo gijutsu kaihatsu)

Abstract

Research and development was conducted of a technology for manufacturing an ultrathin polycrystalline silicon solar cell capable of efficiency enhancement and cost reduction earlier than the types of polycrystalline solar cells now available on the market. In this fiscal year, a silicon melt/solidification experimenting apparatus was built for manufacturing high-quality silicon ingots. Using an apparatus with its performance similar to the newly built one, a preliminary experiment was conducted involving high-purity silicon ingot manufacturing. In the experiment, boron was added to 75 kg of silicon for semiconductor devices so that its resistivity may be 0.5 ohm-cm. The silicon was melted in a quartz mold, and then subjected to unidirectional coagulation at 0.13 mm/min that started at the bottom to proceed upward. The result was a silicon ingot 44 cm times 44 cm times 17 cm (height). The ingot thus obtained exhibited 0.4-0.8 ohm-cm in resistivity distribution. Solar cells produced from the ingot showed a conversion rate of 16.9%. (NEDO)
Publication Date:
Mar 01, 2001
Product Type:
Technical Report
Report Number:
JP-NEDO-010019384
Resource Relation:
Other Information: PBD: Mar 2001
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC POWER SUPPLIES; QUALITY CONTROL; SILICON; POLYCRYSTALS; COST; THIN FILMS; MANUFACTURING; SOLIDIFICATION; IMPURITIES; SEMICONDUCTOR MATERIALS; ELECTRIC CONDUCTIVITY; BORON ADDITIONS; ENERGY EFFICIENCY
OSTI ID:
20313494
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0240566
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20313494
Submitting Site:
NEDO
Size:
95 pages
Announcement Date:

Citation Formats

Fiscal 2000 achievement report. Research and development of fast-acting innovative energy-environment technology (Development of fast-acting high-efficiency solar cell technology - Development of high-quality ingot manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko itaku kenkyu gyomu seika hokokusho. Sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu (Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu - Kohinshitsu ingot seizo gijutsu kaihatsu). Japan: N. p., 2001. Web.
Fiscal 2000 achievement report. Research and development of fast-acting innovative energy-environment technology (Development of fast-acting high-efficiency solar cell technology - Development of high-quality ingot manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko itaku kenkyu gyomu seika hokokusho. Sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu (Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu - Kohinshitsu ingot seizo gijutsu kaihatsu). Japan.
2001. "Fiscal 2000 achievement report. Research and development of fast-acting innovative energy-environment technology (Development of fast-acting high-efficiency solar cell technology - Development of high-quality ingot manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko itaku kenkyu gyomu seika hokokusho. Sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu (Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu - Kohinshitsu ingot seizo gijutsu kaihatsu)." Japan.
@misc{etde_20313494,
title = {Fiscal 2000 achievement report. Research and development of fast-acting innovative energy-environment technology (Development of fast-acting high-efficiency solar cell technology - Development of high-quality ingot manufacturing technology); 2000 nendo shin energy sangyo gijutsu sogo kaihatsu kiko itaku kenkyu gyomu seika hokokusho. Sokkoteki kakushinteki energy kankyo gijutsu kenkyu kaihatsu (Sokkogata kokoritsu taiyo denchi gijutsu kaihatsu - Kohinshitsu ingot seizo gijutsu kaihatsu)}
abstractNote = {Research and development was conducted of a technology for manufacturing an ultrathin polycrystalline silicon solar cell capable of efficiency enhancement and cost reduction earlier than the types of polycrystalline solar cells now available on the market. In this fiscal year, a silicon melt/solidification experimenting apparatus was built for manufacturing high-quality silicon ingots. Using an apparatus with its performance similar to the newly built one, a preliminary experiment was conducted involving high-purity silicon ingot manufacturing. In the experiment, boron was added to 75 kg of silicon for semiconductor devices so that its resistivity may be 0.5 ohm-cm. The silicon was melted in a quartz mold, and then subjected to unidirectional coagulation at 0.13 mm/min that started at the bottom to proceed upward. The result was a silicon ingot 44 cm times 44 cm times 17 cm (height). The ingot thus obtained exhibited 0.4-0.8 ohm-cm in resistivity distribution. Solar cells produced from the ingot showed a conversion rate of 16.9%. (NEDO)}
place = {Japan}
year = {2001}
month = {Mar}
}