Abstract
3C-SiC films were grown on a silicon (100) substrate by a plasma enhanced chemical vapor deposition (PECVD) technique using a gas mixture of SiCl{sub 4}/CH{sub 4}/H{sub 2} system in a temperature region between 1170 deg. C and 1335 deg. C. Crystallinity of deposited films was investigated by varying the deposition temperature input gas ratio, R{sub x}[=CH{sub 4}/(CH{sub 4}+H{sub 2})],and r.f. power. The PECVD method effectively enhanced the deposition rate compared with TCVD(thermal chemical vapor deposition).The highest preferred orientation of deposited 3C-SiC layers was found to be (111)plane. The crystallinity of 3C-SiC, on Si substrate was significantly influenced by the R{sub x} value and improved with decreasing R{sub x}. The free silicon was co-deposited with 3C-SiC, but the content of free silicon was decreased with increasing deposition temperature and r.f. power. The 3C-SiC films which had the relatively good crystallinity were obtained at a deposition temperature of 1270 deg. C, an input gas ratio of R{sub x}=0.04, and a r.f. power of 60W. (author). 15 refs., 9 figs.
Citation Formats
Seo, J Y, Yoon, S Y, and Kim, K H.
Deposition of 3C-SiC films by plasma-enhanced chemical vapor deposition (I) : Deposition behaviors of SiC with deposition parameters.
Korea, Republic of: N. p.,
2001.
Web.
Seo, J Y, Yoon, S Y, & Kim, K H.
Deposition of 3C-SiC films by plasma-enhanced chemical vapor deposition (I) : Deposition behaviors of SiC with deposition parameters.
Korea, Republic of.
Seo, J Y, Yoon, S Y, and Kim, K H.
2001.
"Deposition of 3C-SiC films by plasma-enhanced chemical vapor deposition (I) : Deposition behaviors of SiC with deposition parameters."
Korea, Republic of.
@misc{etde_20237127,
title = {Deposition of 3C-SiC films by plasma-enhanced chemical vapor deposition (I) : Deposition behaviors of SiC with deposition parameters}
author = {Seo, J Y, Yoon, S Y, and Kim, K H}
abstractNote = {3C-SiC films were grown on a silicon (100) substrate by a plasma enhanced chemical vapor deposition (PECVD) technique using a gas mixture of SiCl{sub 4}/CH{sub 4}/H{sub 2} system in a temperature region between 1170 deg. C and 1335 deg. C. Crystallinity of deposited films was investigated by varying the deposition temperature input gas ratio, R{sub x}[=CH{sub 4}/(CH{sub 4}+H{sub 2})],and r.f. power. The PECVD method effectively enhanced the deposition rate compared with TCVD(thermal chemical vapor deposition).The highest preferred orientation of deposited 3C-SiC layers was found to be (111)plane. The crystallinity of 3C-SiC, on Si substrate was significantly influenced by the R{sub x} value and improved with decreasing R{sub x}. The free silicon was co-deposited with 3C-SiC, but the content of free silicon was decreased with increasing deposition temperature and r.f. power. The 3C-SiC films which had the relatively good crystallinity were obtained at a deposition temperature of 1270 deg. C, an input gas ratio of R{sub x}=0.04, and a r.f. power of 60W. (author). 15 refs., 9 figs.}
journal = []
issue = {6}
volume = {38}
journal type = {AC}
place = {Korea, Republic of}
year = {2001}
month = {Jun}
}
title = {Deposition of 3C-SiC films by plasma-enhanced chemical vapor deposition (I) : Deposition behaviors of SiC with deposition parameters}
author = {Seo, J Y, Yoon, S Y, and Kim, K H}
abstractNote = {3C-SiC films were grown on a silicon (100) substrate by a plasma enhanced chemical vapor deposition (PECVD) technique using a gas mixture of SiCl{sub 4}/CH{sub 4}/H{sub 2} system in a temperature region between 1170 deg. C and 1335 deg. C. Crystallinity of deposited films was investigated by varying the deposition temperature input gas ratio, R{sub x}[=CH{sub 4}/(CH{sub 4}+H{sub 2})],and r.f. power. The PECVD method effectively enhanced the deposition rate compared with TCVD(thermal chemical vapor deposition).The highest preferred orientation of deposited 3C-SiC layers was found to be (111)plane. The crystallinity of 3C-SiC, on Si substrate was significantly influenced by the R{sub x} value and improved with decreasing R{sub x}. The free silicon was co-deposited with 3C-SiC, but the content of free silicon was decreased with increasing deposition temperature and r.f. power. The 3C-SiC films which had the relatively good crystallinity were obtained at a deposition temperature of 1270 deg. C, an input gas ratio of R{sub x}=0.04, and a r.f. power of 60W. (author). 15 refs., 9 figs.}
journal = []
issue = {6}
volume = {38}
journal type = {AC}
place = {Korea, Republic of}
year = {2001}
month = {Jun}
}