Abstract
By means of {sup 29}Si MAS NMR, ESR, XRD, SAXS as well as DTA/TG the crystallization process of polymer-derived amorphous silicon carbide was studied. The temperatures of optimum nucleation and crystal growth, respectively, were determined and the corresponding activation energies were estimated. The nucleation mechanism proposed for the nearly stoichiometric Si-C system investigated here differs from mechanisms reported hitherto in the literature for C rich systems. (orig.)
Mueller, E;
Kurtenbach, D;
Roewer, G;
Brendler, E;
[1]
Mitchell, B S
[2]
- Freiberg Univ. of Mining and Technology, Freiberg (Germany)
- Tulane Univ., New Orleans, LA (United States)
Citation Formats
Mueller, E, Kurtenbach, D, Roewer, G, Brendler, E, and Mitchell, B S.
Crystallization kinetics of polysilane derived SiC.
Switzerland: N. p.,
2002.
Web.
Mueller, E, Kurtenbach, D, Roewer, G, Brendler, E, & Mitchell, B S.
Crystallization kinetics of polysilane derived SiC.
Switzerland.
Mueller, E, Kurtenbach, D, Roewer, G, Brendler, E, and Mitchell, B S.
2002.
"Crystallization kinetics of polysilane derived SiC."
Switzerland.
@misc{etde_20210669,
title = {Crystallization kinetics of polysilane derived SiC}
author = {Mueller, E, Kurtenbach, D, Roewer, G, Brendler, E, and Mitchell, B S}
abstractNote = {By means of {sup 29}Si MAS NMR, ESR, XRD, SAXS as well as DTA/TG the crystallization process of polymer-derived amorphous silicon carbide was studied. The temperatures of optimum nucleation and crystal growth, respectively, were determined and the corresponding activation energies were estimated. The nucleation mechanism proposed for the nearly stoichiometric Si-C system investigated here differs from mechanisms reported hitherto in the literature for C rich systems. (orig.)}
journal = []
issue = {pt.1}
volume = {206-213}
journal type = {AC}
place = {Switzerland}
year = {2002}
month = {Jul}
}
title = {Crystallization kinetics of polysilane derived SiC}
author = {Mueller, E, Kurtenbach, D, Roewer, G, Brendler, E, and Mitchell, B S}
abstractNote = {By means of {sup 29}Si MAS NMR, ESR, XRD, SAXS as well as DTA/TG the crystallization process of polymer-derived amorphous silicon carbide was studied. The temperatures of optimum nucleation and crystal growth, respectively, were determined and the corresponding activation energies were estimated. The nucleation mechanism proposed for the nearly stoichiometric Si-C system investigated here differs from mechanisms reported hitherto in the literature for C rich systems. (orig.)}
journal = []
issue = {pt.1}
volume = {206-213}
journal type = {AC}
place = {Switzerland}
year = {2002}
month = {Jul}
}