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Numerical analysis of crystalline silicon thin film solar cells on perforated SiO{sub 2} barrier layers

Abstract

We present a numerical model for the analysis of crystalline thin film cells on a perforated SiO{sub 2} barrier layer. The external reflection of the planar cell, including the optical properties of the double layer antireflection coating, the reflection at the intermediate oxide and at the rear side can be modelled analytically with a high degree of accuracy. The metal area fraction and the thickness of the double layer antireflection coating and the intermediate oxide are extracted from measured reflection data. These values are used as input parameters in order to calculate the generation rate function using the ray tracing program RAYN. Electrical device simulation (DESSIS) is performed using a two dimensional symmetry element with different diffusion lengths assigned to the electrically active cell area above the seeding holes, the electrically active cell area above the intermediate oxide and the substrate. The numerical model describes accurately the measured short circuit current density, the open circuit voltage and the spectral response at different cell regions with one baseline set of recombination parameters, whereas the epi-layer diffusion length is approximated by an average value for the investigated cell area. The impact of epi-layer thickness and minority carrier diffusion length on the solar  More>>
Authors:
Dicker, J; Schumacher, J O; Soelter, J; Zimmermann, W; Bau, S; Warta, W [1] 
  1. Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany)
Publication Date:
Jul 01, 2000
Product Type:
Conference
Reference Number:
EDB-01:087514
Resource Relation:
Conference: 16. European photovoltaic solar energy conference and exhibition, Glasgow (United Kingdom), 1-5 May 2000; Other Information: PBD: 2000
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; NUMERICAL SOLUTION; THIN FILMS; LAYERS; SILICON OXIDES; SUBSTRATES; REFLECTIVITY; SURFACES; COATINGS
OSTI ID:
20195361
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
TRN: DE01GC421
Availability:
Available from: http://www.ise.fhg.de
Submitting Site:
DE
Size:
4 pages
Announcement Date:

Citation Formats

Dicker, J, Schumacher, J O, Soelter, J, Zimmermann, W, Bau, S, and Warta, W. Numerical analysis of crystalline silicon thin film solar cells on perforated SiO{sub 2} barrier layers. Germany: N. p., 2000. Web.
Dicker, J, Schumacher, J O, Soelter, J, Zimmermann, W, Bau, S, & Warta, W. Numerical analysis of crystalline silicon thin film solar cells on perforated SiO{sub 2} barrier layers. Germany.
Dicker, J, Schumacher, J O, Soelter, J, Zimmermann, W, Bau, S, and Warta, W. 2000. "Numerical analysis of crystalline silicon thin film solar cells on perforated SiO{sub 2} barrier layers." Germany.
@misc{etde_20195361,
title = {Numerical analysis of crystalline silicon thin film solar cells on perforated SiO{sub 2} barrier layers}
author = {Dicker, J, Schumacher, J O, Soelter, J, Zimmermann, W, Bau, S, and Warta, W}
abstractNote = {We present a numerical model for the analysis of crystalline thin film cells on a perforated SiO{sub 2} barrier layer. The external reflection of the planar cell, including the optical properties of the double layer antireflection coating, the reflection at the intermediate oxide and at the rear side can be modelled analytically with a high degree of accuracy. The metal area fraction and the thickness of the double layer antireflection coating and the intermediate oxide are extracted from measured reflection data. These values are used as input parameters in order to calculate the generation rate function using the ray tracing program RAYN. Electrical device simulation (DESSIS) is performed using a two dimensional symmetry element with different diffusion lengths assigned to the electrically active cell area above the seeding holes, the electrically active cell area above the intermediate oxide and the substrate. The numerical model describes accurately the measured short circuit current density, the open circuit voltage and the spectral response at different cell regions with one baseline set of recombination parameters, whereas the epi-layer diffusion length is approximated by an average value for the investigated cell area. The impact of epi-layer thickness and minority carrier diffusion length on the solar cell performance is calculated. (orig.)}
place = {Germany}
year = {2000}
month = {Jul}
}