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Fiscal 1980-1987 Sunshine Program achievement reports. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Overview: Development of technology for chlorosilane hydrogen-reduction process); 1980-1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jijkken seisei kensho sokatsuban (chlorosilane no suiso kangen kotei no gijutsu kaihatsu)

Abstract

The chlorosilane hydrogen-reduction technology development period may be divided into the first phase (fiscal 1980-1985) and the second phase (fiscal 1986-1988). During the former phase, efforts were exerted to develop a small experimental device (10 tons/year class) and technologies to operate the same. Important challenges were to cause reaction to occur only on the seed grains in the reactor and to create a proper material for the reactor tube. In the latter phase, element technologies were developed, indispensable for the development of a practical reactor. Endeavors exerted to solve these challenges were the development of a high-strength large-diameter reactor tube, the development of an SiC-CVD (chemical vapor deposition) coating technology, and the development of a technology to join parts to the ceramic-made reactor tube. After eight years' striving, a fluidized bed reactor has been successfully constructed, capable of continuously reducing trichlorosilane by hydrogen. The success promises stable production and supply of polycrystalline silicon. The SOG (spun on glass)-Si produced by the reactor is pure enough to serve the purpose of photovoltaics, and its unit cost has been lowered as initially intended. (NEDO)
Authors:
"NONE"
Publication Date:
Nov 01, 1988
Product Type:
Technical Report
Report Number:
JP-NEDO-010014362
Resource Relation:
Other Information: PBD: Nov 1988
Subject:
14 SOLAR ENERGY; SOLAR CELLS; PHOTOVOLTAIC POWER PLANTS; COST; SILICON; HYDROGEN; REDUCTION; CHEMICAL REACTORS; SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; IMPURITIES; SILANES
OSTI ID:
20163181
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0042116
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20163181
Submitting Site:
NEDO
Size:
226 pages
Announcement Date:

Citation Formats

Fiscal 1980-1987 Sunshine Program achievement reports. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Overview: Development of technology for chlorosilane hydrogen-reduction process); 1980-1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jijkken seisei kensho sokatsuban (chlorosilane no suiso kangen kotei no gijutsu kaihatsu). Japan: N. p., 1988. Web.
Fiscal 1980-1987 Sunshine Program achievement reports. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Overview: Development of technology for chlorosilane hydrogen-reduction process); 1980-1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jijkken seisei kensho sokatsuban (chlorosilane no suiso kangen kotei no gijutsu kaihatsu). Japan.
1988. "Fiscal 1980-1987 Sunshine Program achievement reports. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Overview: Development of technology for chlorosilane hydrogen-reduction process); 1980-1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jijkken seisei kensho sokatsuban (chlorosilane no suiso kangen kotei no gijutsu kaihatsu)." Japan.
@misc{etde_20163181,
title = {Fiscal 1980-1987 Sunshine Program achievement reports. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Overview: Development of technology for chlorosilane hydrogen-reduction process); 1980-1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jijkken seisei kensho sokatsuban (chlorosilane no suiso kangen kotei no gijutsu kaihatsu)}
abstractNote = {The chlorosilane hydrogen-reduction technology development period may be divided into the first phase (fiscal 1980-1985) and the second phase (fiscal 1986-1988). During the former phase, efforts were exerted to develop a small experimental device (10 tons/year class) and technologies to operate the same. Important challenges were to cause reaction to occur only on the seed grains in the reactor and to create a proper material for the reactor tube. In the latter phase, element technologies were developed, indispensable for the development of a practical reactor. Endeavors exerted to solve these challenges were the development of a high-strength large-diameter reactor tube, the development of an SiC-CVD (chemical vapor deposition) coating technology, and the development of a technology to join parts to the ceramic-made reactor tube. After eight years' striving, a fluidized bed reactor has been successfully constructed, capable of continuously reducing trichlorosilane by hydrogen. The success promises stable production and supply of polycrystalline silicon. The SOG (spun on glass)-Si produced by the reactor is pure enough to serve the purpose of photovoltaics, and its unit cost has been lowered as initially intended. (NEDO)}
place = {Japan}
year = {1988}
month = {Nov}
}