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Fiscal 1987 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu)

Abstract

Since its construction in 1982, the experimental device capable of 10 tons/year production of SOG (spun on glass)-Si has been in operation, and the trichlorosilane processing fluidized bed reactor has achieved its goals in performance and product quality. Element studies continue for the enlargement of the reactor unit for practical application and for the designing of a large plant of the commercially viable scale. In fiscal 1987, element studies are conducted for the enlargement of the reactor unit. Concerning the development of technologies for the manufacture of large reactor tubes strong enough to withstand practical application, efforts are made to strengthen materials for the fabrication of reactor element tubes (230mm and 500mm in diameter), to develop SiC-CVD (chemical vapor deposition) technology to provide reactor tube materials with resistance to corrosion, and to develop a single reactor tube structure indispensable for device enlargement. For the verification of such element technologies, in line with the study of experimental device operation capable of 10 tons/year SOG-Si production, studies are conducted on continuous stable operation technologies for the fluidized bed reactor, maintenance and improvement of product quality, and enhancement of durability of constituent parts and components. (NEDO)
Authors:
"NONE"
Publication Date:
Mar 01, 1988
Product Type:
Technical Report
Report Number:
JP-NEDO-010014361
Resource Relation:
Other Information: PBD: Mar 1988
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC POWER PLANTS; COST; SILICON; SILANES; HYDROGEN; REDUCTION; FLUIDIZED BEDS; CHEMICAL REACTORS; SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION
OSTI ID:
20163180
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0042115
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20163180
Submitting Site:
NEDO
Size:
111 pages
Announcement Date:

Citation Formats

Fiscal 1987 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu). Japan: N. p., 1988. Web.
Fiscal 1987 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu). Japan.
1988. "Fiscal 1987 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu)." Japan.
@misc{etde_20163180,
title = {Fiscal 1987 Sunshine Program achievement report. Development for practical application of photovoltaic system (Verification of experimental low cost silicon refining - Development of technology for chlorosilane hydrogen-reduction process); 1987 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Tei cost silicon jikken seisei kensho (Chlorosilane no suiso kangen kotei no gijutsu kaihatsu)}
abstractNote = {Since its construction in 1982, the experimental device capable of 10 tons/year production of SOG (spun on glass)-Si has been in operation, and the trichlorosilane processing fluidized bed reactor has achieved its goals in performance and product quality. Element studies continue for the enlargement of the reactor unit for practical application and for the designing of a large plant of the commercially viable scale. In fiscal 1987, element studies are conducted for the enlargement of the reactor unit. Concerning the development of technologies for the manufacture of large reactor tubes strong enough to withstand practical application, efforts are made to strengthen materials for the fabrication of reactor element tubes (230mm and 500mm in diameter), to develop SiC-CVD (chemical vapor deposition) technology to provide reactor tube materials with resistance to corrosion, and to develop a single reactor tube structure indispensable for device enlargement. For the verification of such element technologies, in line with the study of experimental device operation capable of 10 tons/year SOG-Si production, studies are conducted on continuous stable operation technologies for the fluidized bed reactor, maintenance and improvement of product quality, and enhancement of durability of constituent parts and components. (NEDO)}
place = {Japan}
year = {1988}
month = {Mar}
}