Abstract
Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure, substrate temperature, RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of ITO films fabricated under the optimum deposition conditions (substrate temperature : 300 .deg. C, Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6 X 10{sup 4} mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the ITO films can be effectively used as the transparent shield material. (author). 16 refs., 13 figs., 1 tab.
Citation Formats
Kim, Y S, Jun, Y S, and Kim, S S.
Fabrication of Indium Tin Oxide (ITO) Transparent Thin Films and Their Microwave Shielding Properties.
Korea, Republic of: N. p.,
1999.
Web.
Kim, Y S, Jun, Y S, & Kim, S S.
Fabrication of Indium Tin Oxide (ITO) Transparent Thin Films and Their Microwave Shielding Properties.
Korea, Republic of.
Kim, Y S, Jun, Y S, and Kim, S S.
1999.
"Fabrication of Indium Tin Oxide (ITO) Transparent Thin Films and Their Microwave Shielding Properties."
Korea, Republic of.
@misc{etde_20142269,
title = {Fabrication of Indium Tin Oxide (ITO) Transparent Thin Films and Their Microwave Shielding Properties}
author = {Kim, Y S, Jun, Y S, and Kim, S S}
abstractNote = {Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure, substrate temperature, RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of ITO films fabricated under the optimum deposition conditions (substrate temperature : 300 .deg. C, Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6 X 10{sup 4} mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the ITO films can be effectively used as the transparent shield material. (author). 16 refs., 13 figs., 1 tab.}
journal = []
issue = {11}
volume = {9}
journal type = {AC}
place = {Korea, Republic of}
year = {1999}
month = {Nov}
}
title = {Fabrication of Indium Tin Oxide (ITO) Transparent Thin Films and Their Microwave Shielding Properties}
author = {Kim, Y S, Jun, Y S, and Kim, S S}
abstractNote = {Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure, substrate temperature, RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of ITO films fabricated under the optimum deposition conditions (substrate temperature : 300 .deg. C, Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6 X 10{sup 4} mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the ITO films can be effectively used as the transparent shield material. (author). 16 refs., 13 figs., 1 tab.}
journal = []
issue = {11}
volume = {9}
journal type = {AC}
place = {Korea, Republic of}
year = {1999}
month = {Nov}
}