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Fiscal 1999 achievement report. Development of technologies for creating high-quality crystalline materials for low-loss power control devices; 1999 nendo teisonshitsu denryoku seigyo soshiyo kohinshitsu kessho zairyo sosei gijutsu kaihatsu seika hokokusho

Abstract

Researches are conducted for the advancement of, and loss reduction for, semiconductor devices for controlling electric power. Physical properties of molten semiconductors etc. are accurately measured in a microgravity environment and computer simulations are performed, which are for the production of larger-diameter, higher-quality semiconductor crystal materials. In the measurement of physical properties of molten semiconductors etc. carried out at JAMIC (Japan Microgravity Center) free-fall facilities where a high-quality microgravity environment is available, measurements are made of the surface tension, density, viscosity index, heat conductivity, and vertical spectral factor of the molten silicon. Solubility is measured of silica, silicon nitride, and silicon carbide, and, in equilibrium with these, the oxygen, nitrogen, and carbon in molten silicon, and highly reliable data are obtained. As for the comprehensive analysis code developed under this subject, the X-ray image data of the surface of a solid solution, collected from a crystal growing in a small Cz furnace at the NEC Fundamental Research Laboratories, and data of oxygen concentration in the silicon crystal agree excellently with the result of calculation, which suggests that the code is reliable. (NEDO)
Authors:
"NONE"
Publication Date:
Mar 01, 2000
Product Type:
Technical Report
Report Number:
JP-NEDO-010016057
Resource Relation:
Other Information: PBD: Mar 2000
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR DEVICES; POWER LOSSES; CRYSTALS; QUALITY CONTROL; WEIGHTLESSNESS; COMPUTERIZED SIMULATION; SILICON; SURFACE TENSION; VISCOSITY; THERMAL CONDUCTIVITY
OSTI ID:
20140149
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0041538
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20140149
Submitting Site:
NEDO
Size:
347 pages
Announcement Date:

Citation Formats

Fiscal 1999 achievement report. Development of technologies for creating high-quality crystalline materials for low-loss power control devices; 1999 nendo teisonshitsu denryoku seigyo soshiyo kohinshitsu kessho zairyo sosei gijutsu kaihatsu seika hokokusho. Japan: N. p., 2000. Web.
Fiscal 1999 achievement report. Development of technologies for creating high-quality crystalline materials for low-loss power control devices; 1999 nendo teisonshitsu denryoku seigyo soshiyo kohinshitsu kessho zairyo sosei gijutsu kaihatsu seika hokokusho. Japan.
2000. "Fiscal 1999 achievement report. Development of technologies for creating high-quality crystalline materials for low-loss power control devices; 1999 nendo teisonshitsu denryoku seigyo soshiyo kohinshitsu kessho zairyo sosei gijutsu kaihatsu seika hokokusho." Japan.
@misc{etde_20140149,
title = {Fiscal 1999 achievement report. Development of technologies for creating high-quality crystalline materials for low-loss power control devices; 1999 nendo teisonshitsu denryoku seigyo soshiyo kohinshitsu kessho zairyo sosei gijutsu kaihatsu seika hokokusho}
abstractNote = {Researches are conducted for the advancement of, and loss reduction for, semiconductor devices for controlling electric power. Physical properties of molten semiconductors etc. are accurately measured in a microgravity environment and computer simulations are performed, which are for the production of larger-diameter, higher-quality semiconductor crystal materials. In the measurement of physical properties of molten semiconductors etc. carried out at JAMIC (Japan Microgravity Center) free-fall facilities where a high-quality microgravity environment is available, measurements are made of the surface tension, density, viscosity index, heat conductivity, and vertical spectral factor of the molten silicon. Solubility is measured of silica, silicon nitride, and silicon carbide, and, in equilibrium with these, the oxygen, nitrogen, and carbon in molten silicon, and highly reliable data are obtained. As for the comprehensive analysis code developed under this subject, the X-ray image data of the surface of a solid solution, collected from a crystal growing in a small Cz furnace at the NEC Fundamental Research Laboratories, and data of oxygen concentration in the silicon crystal agree excellently with the result of calculation, which suggests that the code is reliable. (NEDO)}
place = {Japan}
year = {2000}
month = {Mar}
}