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FY 1998 achievement report on the photon measuring/processing technology (R and D of the photon measuring/processing technology); 1998 nendo foton keisoku kako gijutsu seika hokokusho. Foton keisoku kako gijutsu no kenkyu kaihatsu

Abstract

In this project, the survey/arrangement were made of the trend of the recent technology such as photon (laser) measuring/processing/generation and a possibility of adopting the photon technology to the field except measuring/processing, to clarify technical subjects for establishing/commercializing the photon technology. Also for the purpose of reducing the energy cost by improving the performance of laser processing device, prolonging the life and reducing the operational cost, the development of the following were carried out: (1) high efficiency laser processing device. (2) high conversion efficiency laser diode. In (1), a laser generating device with Yb:YAG crystal as oscillating medium was trially manufactured, and the power of 35W and optical-optical conversion efficiency of 7.1% were obtained. A comparison was also made between Yb:YAG laser and Nd:YAG laser, and made it clear that as the industrial use high power laser, Nd:YAG laser has the advantage over the other. In (2), the development was made of technology for simultaneous uniform growth of more than one LD crystal wafers with high conversion efficiency and technology for evaluation. Namely, the high uniformity crystal wafer with variations among wafers of {+-}4% was obtained using the introduced high efficiency crystal growth device and high efficiency thin film evaluation  More>>
Authors:
"NONE"
Publication Date:
Mar 01, 2000
Product Type:
Technical Report
Report Number:
JP-NEDO-010015286
Resource Relation:
Other Information: PBD: Mar 2000
Subject:
42 ENGINEERING; LASERS; MEASURING INSTRUMENTS; LASER BEAM MACHINING; PHOTON BEAMS; SEMICONDUCTOR DIODES; YTTERBIUM; ALUMINIUM OXIDES; FERRITE GARNETS; YTTRIUM COMPOUNDS; NEODYMIUM; CRYSTAL GROWTH; THIN FILMS; SUBSTRATES
OSTI ID:
20124372
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0041244
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20124372
Submitting Site:
NEDO
Size:
[300] pages
Announcement Date:

Citation Formats

FY 1998 achievement report on the photon measuring/processing technology (R and D of the photon measuring/processing technology); 1998 nendo foton keisoku kako gijutsu seika hokokusho. Foton keisoku kako gijutsu no kenkyu kaihatsu. Japan: N. p., 2000. Web.
FY 1998 achievement report on the photon measuring/processing technology (R and D of the photon measuring/processing technology); 1998 nendo foton keisoku kako gijutsu seika hokokusho. Foton keisoku kako gijutsu no kenkyu kaihatsu. Japan.
2000. "FY 1998 achievement report on the photon measuring/processing technology (R and D of the photon measuring/processing technology); 1998 nendo foton keisoku kako gijutsu seika hokokusho. Foton keisoku kako gijutsu no kenkyu kaihatsu." Japan.
@misc{etde_20124372,
title = {FY 1998 achievement report on the photon measuring/processing technology (R and D of the photon measuring/processing technology); 1998 nendo foton keisoku kako gijutsu seika hokokusho. Foton keisoku kako gijutsu no kenkyu kaihatsu}
abstractNote = {In this project, the survey/arrangement were made of the trend of the recent technology such as photon (laser) measuring/processing/generation and a possibility of adopting the photon technology to the field except measuring/processing, to clarify technical subjects for establishing/commercializing the photon technology. Also for the purpose of reducing the energy cost by improving the performance of laser processing device, prolonging the life and reducing the operational cost, the development of the following were carried out: (1) high efficiency laser processing device. (2) high conversion efficiency laser diode. In (1), a laser generating device with Yb:YAG crystal as oscillating medium was trially manufactured, and the power of 35W and optical-optical conversion efficiency of 7.1% were obtained. A comparison was also made between Yb:YAG laser and Nd:YAG laser, and made it clear that as the industrial use high power laser, Nd:YAG laser has the advantage over the other. In (2), the development was made of technology for simultaneous uniform growth of more than one LD crystal wafers with high conversion efficiency and technology for evaluation. Namely, the high uniformity crystal wafer with variations among wafers of {+-}4% was obtained using the introduced high efficiency crystal growth device and high efficiency thin film evaluation device. (NEDO)}
place = {Japan}
year = {2000}
month = {Mar}
}