Abstract
This report summarizes the FY 1998 research and development results of carbon-based high-performance materials technology. For (control technology of morphology and electrical conduction), a large-sized morphology controlling film-making apparatus was used, to confirm synthesis of crystalline diamond films. For research on growth of large-sized single-crystal diamond, the simulated results of the vapor-phase reactions and gas flow in a plasma were compared with the observed ones, to collect the data necessary for designing a high-speed homoepitaxial growth apparatus. For R and D of heteroepitaxial growth of thin diamond films, highly single-crystalline thin platinum films were successfully formed on a sapphire substrate. For (control technology of surface-interface and electron emission characteristics), the tests were conducted using newly introduced apparatuses, an (electron emission analysis/evaluation apparatus), (high-quality carbon-based thin film synthesizing apparatus) and (element processing/treatment apparatus). It is found that electron emission efficiency is greatly improved when the substrate with diamond particle seeds is plasma-treated under specific conditions. (NEDO)
Citation Formats
None.
FY 1998 Annual report on research and development of industrial science and technology. R and D of carbon-based high-performance materials technology (R and D for rationalization of energy consumption); 1998 nendo tansokei kokino zairyo gijutsu no kenkyu kaihatsu seika hokokusho. Energy shiyo gorika gijutsu kaihatsu.
Japan: N. p.,
1999.
Web.
None.
FY 1998 Annual report on research and development of industrial science and technology. R and D of carbon-based high-performance materials technology (R and D for rationalization of energy consumption); 1998 nendo tansokei kokino zairyo gijutsu no kenkyu kaihatsu seika hokokusho. Energy shiyo gorika gijutsu kaihatsu.
Japan.
None.
1999.
"FY 1998 Annual report on research and development of industrial science and technology. R and D of carbon-based high-performance materials technology (R and D for rationalization of energy consumption); 1998 nendo tansokei kokino zairyo gijutsu no kenkyu kaihatsu seika hokokusho. Energy shiyo gorika gijutsu kaihatsu."
Japan.
@misc{etde_20102764,
title = {FY 1998 Annual report on research and development of industrial science and technology. R and D of carbon-based high-performance materials technology (R and D for rationalization of energy consumption); 1998 nendo tansokei kokino zairyo gijutsu no kenkyu kaihatsu seika hokokusho. Energy shiyo gorika gijutsu kaihatsu}
author = {None}
abstractNote = {This report summarizes the FY 1998 research and development results of carbon-based high-performance materials technology. For (control technology of morphology and electrical conduction), a large-sized morphology controlling film-making apparatus was used, to confirm synthesis of crystalline diamond films. For research on growth of large-sized single-crystal diamond, the simulated results of the vapor-phase reactions and gas flow in a plasma were compared with the observed ones, to collect the data necessary for designing a high-speed homoepitaxial growth apparatus. For R and D of heteroepitaxial growth of thin diamond films, highly single-crystalline thin platinum films were successfully formed on a sapphire substrate. For (control technology of surface-interface and electron emission characteristics), the tests were conducted using newly introduced apparatuses, an (electron emission analysis/evaluation apparatus), (high-quality carbon-based thin film synthesizing apparatus) and (element processing/treatment apparatus). It is found that electron emission efficiency is greatly improved when the substrate with diamond particle seeds is plasma-treated under specific conditions. (NEDO)}
place = {Japan}
year = {1999}
month = {Sep}
}
title = {FY 1998 Annual report on research and development of industrial science and technology. R and D of carbon-based high-performance materials technology (R and D for rationalization of energy consumption); 1998 nendo tansokei kokino zairyo gijutsu no kenkyu kaihatsu seika hokokusho. Energy shiyo gorika gijutsu kaihatsu}
author = {None}
abstractNote = {This report summarizes the FY 1998 research and development results of carbon-based high-performance materials technology. For (control technology of morphology and electrical conduction), a large-sized morphology controlling film-making apparatus was used, to confirm synthesis of crystalline diamond films. For research on growth of large-sized single-crystal diamond, the simulated results of the vapor-phase reactions and gas flow in a plasma were compared with the observed ones, to collect the data necessary for designing a high-speed homoepitaxial growth apparatus. For R and D of heteroepitaxial growth of thin diamond films, highly single-crystalline thin platinum films were successfully formed on a sapphire substrate. For (control technology of surface-interface and electron emission characteristics), the tests were conducted using newly introduced apparatuses, an (electron emission analysis/evaluation apparatus), (high-quality carbon-based thin film synthesizing apparatus) and (element processing/treatment apparatus). It is found that electron emission efficiency is greatly improved when the substrate with diamond particle seeds is plasma-treated under specific conditions. (NEDO)}
place = {Japan}
year = {1999}
month = {Sep}
}