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Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on low-temperature film formation technology); 1991 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Teion seimaku gijutsu no kenkyu

Abstract

For the establishment of a low-temperature formation technology for compound semiconductor polycrystalline thin film of CuInSe{sub 2}, research is conducted involving film formation and film quality evaluation using the ICB (ion cluster beam) method. In the research on the film formation, an In-excessive film is placed on a Cu-excessive CuInSe{sub 2} film using the ICB method for the formation of a two-layer film. Bulk CuInSe{sub 2} and thin-film polycrystalline CuInSe{sub 2} are evaluated using PL (photoluminescence) spectrums excited by YAG (yttrium aluminum garnet) and Ar. In both bulk and thin film, it is suspected that clues are latent in the levels deeper than hitherto reported. A luminescent belt of 0.75eV is detected. Changes in film quality before and after oxygen annealing are verified using the YAG-excited and Ar-excited PL spectrums, and the result suggests the feasibility of tracking the process in which the effect of annealing propagates inward from the interfacial surface. Fe-added single-crystal CuInSe{sub 2} is investigated for the optical and photoelectrical effects of Fe impurities. (NEDO)
Publication Date:
Mar 01, 1992
Product Type:
Technical Report
Report Number:
JP-NEDO-0017998
Resource Relation:
Other Information: PBD: Mar 1992
Subject:
14 SOLAR ENERGY; SUNSHINE PROJECT; PHOTOVOLTAIC CELLS; MEMBRANES; POLYCRYSTALS; ION BEAMS; ENERGY LEVELS; ANNEALING; INTERFACES; IMPURITIES
OSTI ID:
20094385
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040592
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20094385
Submitting Site:
NEDO
Size:
29 pages
Announcement Date:
May 21, 2002

Citation Formats

None. Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on low-temperature film formation technology); 1991 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Teion seimaku gijutsu no kenkyu. Japan: N. p., 1992. Web.
None. Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on low-temperature film formation technology); 1991 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Teion seimaku gijutsu no kenkyu. Japan.
None. 1992. "Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on low-temperature film formation technology); 1991 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Teion seimaku gijutsu no kenkyu." Japan.
@misc{etde_20094385,
title = {Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of high-efficiency solar cells (Research on low-temperature film formation technology); 1991 nendo kokoritsu taiyo denchi no kenkyu kaihatsu seika hokokusho. Teion seimaku gijutsu no kenkyu}
author = {None}
abstractNote = {For the establishment of a low-temperature formation technology for compound semiconductor polycrystalline thin film of CuInSe{sub 2}, research is conducted involving film formation and film quality evaluation using the ICB (ion cluster beam) method. In the research on the film formation, an In-excessive film is placed on a Cu-excessive CuInSe{sub 2} film using the ICB method for the formation of a two-layer film. Bulk CuInSe{sub 2} and thin-film polycrystalline CuInSe{sub 2} are evaluated using PL (photoluminescence) spectrums excited by YAG (yttrium aluminum garnet) and Ar. In both bulk and thin film, it is suspected that clues are latent in the levels deeper than hitherto reported. A luminescent belt of 0.75eV is detected. Changes in film quality before and after oxygen annealing are verified using the YAG-excited and Ar-excited PL spectrums, and the result suggests the feasibility of tracking the process in which the effect of annealing propagates inward from the interfacial surface. Fe-added single-crystal CuInSe{sub 2} is investigated for the optical and photoelectrical effects of Fe impurities. (NEDO)}
place = {Japan}
year = {1992}
month = {Mar}
}