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Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu)

Abstract

For the development of high-efficiency, large-area, long-life, and low-cost solar cells, research is conducted on new methods of film formation and defect evaluation. Concerning the kinetics of Si thin film, a radical beam deposition method is proposed as a new low-temperature thin film growth method. Using the new method, a {mu}c-Si film is manufactured, through only a purely radical substrate surface reaction of chemically active, electrically neutral excited species. In research on the amorphous semiconductor superlattice, a new study is conducted on a multilayer, cyclic-structure superlattice consisting of thin films of a-Si:H and a-Si{sub 1-x}N{sub x}:H. In the research on an a-Si:H film formed by the direct photo-CVD (chemical vapor deposition) of disilane, the unit is improved and B and P are successfully doped by means of decompressed photo-CVD. In the evaluation of new materials for solar cells, research is conducted on the after-annealing characteristics of a-Si:H grown at a high speed, electrical characteristics of post-hydrogenated low boron-doped CVD a-Si, and microcrystalline SiGe alloys made by the spattering plasma CVD method. (NEDO)
Authors:
"NONE"
Publication Date:
Mar 01, 1985
Product Type:
Technical Report
Report Number:
JP-NEDO-0017987
Resource Relation:
Other Information: PBD: Mar 1985
Subject:
14 SOLAR ENERGY; SUNSHINE PROJECT; PHOTOVOLTAIC CELLS; SILICON; AMORPHOUS STATE; CRYSTAL GROWTH; LIFETIME; COST; SILANES; CHEMICAL VAPOR DEPOSITION
OSTI ID:
20094374
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040581
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20094374
Submitting Site:
NEDO
Size:
101 pages
Announcement Date:

Citation Formats

Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu). Japan: N. p., 1985. Web.
Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu). Japan.
1985. "Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu)." Japan.
@misc{etde_20094374,
title = {Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of photovoltaic power system (Research and development of amorphous solar cells - Research on defect density in amorphous silicon); 1984 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (amorphous silicon no kekkan mitsudo no kenkyu)}
abstractNote = {For the development of high-efficiency, large-area, long-life, and low-cost solar cells, research is conducted on new methods of film formation and defect evaluation. Concerning the kinetics of Si thin film, a radical beam deposition method is proposed as a new low-temperature thin film growth method. Using the new method, a {mu}c-Si film is manufactured, through only a purely radical substrate surface reaction of chemically active, electrically neutral excited species. In research on the amorphous semiconductor superlattice, a new study is conducted on a multilayer, cyclic-structure superlattice consisting of thin films of a-Si:H and a-Si{sub 1-x}N{sub x}:H. In the research on an a-Si:H film formed by the direct photo-CVD (chemical vapor deposition) of disilane, the unit is improved and B and P are successfully doped by means of decompressed photo-CVD. In the evaluation of new materials for solar cells, research is conducted on the after-annealing characteristics of a-Si:H grown at a high speed, electrical characteristics of post-hydrogenated low boron-doped CVD a-Si, and microcrystalline SiGe alloys made by the spattering plasma CVD method. (NEDO)}
place = {Japan}
year = {1985}
month = {Mar}
}