Abstract
When discharge plasma is applied for film formation, ions affect the quality of the resultant film. In the case of plasma CVD (chemical vapor deposition) method, there exists correspondence between the radicals ratio SiH/H and solar cell conversion efficiency, and plasma measurement may be used for the control of film formation conditions. The state of distribution of radicals in discharge plasma is dependent on the type of radicals, and there is an optimum substrate position. Photoelectric characteristics are improved when a grid electrode is used for plasma separation. The surface of a transparent conductive film (ITO: indium-tin oxide) to be the substrate for film formation needs to be flat, and part of its Si is oxidized into SiO{sub 2} by generated oxygen. An ITO film coated by chemically stable SnO{sub 2} is useful. When the ion plating method is employed, film formation conditions are first selected, and then, in a heat treatment to follow, resistance films of various surface conditions are obtained. Carbon-added a-Si film formation conditions and the relationship between film qualities and solar cell characteristics are elucidated. In a solar cell of the p-i-n structure with an a-Si:C:H film acting as the p-layer, a conversion efficiency of 7.6%
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None.
Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of high-quality amorphous silicon film formation technologies using plasma separation); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (plasma bunri ni yoru kohinshitsu amorphous silicon maku seimaku gijutsu no kenkyu kaihatsu).
Japan: N. p.,
1982.
Web.
None.
Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of high-quality amorphous silicon film formation technologies using plasma separation); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (plasma bunri ni yoru kohinshitsu amorphous silicon maku seimaku gijutsu no kenkyu kaihatsu).
Japan.
None.
1982.
"Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of high-quality amorphous silicon film formation technologies using plasma separation); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (plasma bunri ni yoru kohinshitsu amorphous silicon maku seimaku gijutsu no kenkyu kaihatsu)."
Japan.
@misc{etde_20094357,
title = {Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of high-quality amorphous silicon film formation technologies using plasma separation); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (plasma bunri ni yoru kohinshitsu amorphous silicon maku seimaku gijutsu no kenkyu kaihatsu)}
author = {None}
abstractNote = {When discharge plasma is applied for film formation, ions affect the quality of the resultant film. In the case of plasma CVD (chemical vapor deposition) method, there exists correspondence between the radicals ratio SiH/H and solar cell conversion efficiency, and plasma measurement may be used for the control of film formation conditions. The state of distribution of radicals in discharge plasma is dependent on the type of radicals, and there is an optimum substrate position. Photoelectric characteristics are improved when a grid electrode is used for plasma separation. The surface of a transparent conductive film (ITO: indium-tin oxide) to be the substrate for film formation needs to be flat, and part of its Si is oxidized into SiO{sub 2} by generated oxygen. An ITO film coated by chemically stable SnO{sub 2} is useful. When the ion plating method is employed, film formation conditions are first selected, and then, in a heat treatment to follow, resistance films of various surface conditions are obtained. Carbon-added a-Si film formation conditions and the relationship between film qualities and solar cell characteristics are elucidated. In a solar cell of the p-i-n structure with an a-Si:C:H film acting as the p-layer, a conversion efficiency of 7.6% is achieved. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}
title = {Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of high-quality amorphous silicon film formation technologies using plasma separation); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (plasma bunri ni yoru kohinshitsu amorphous silicon maku seimaku gijutsu no kenkyu kaihatsu)}
author = {None}
abstractNote = {When discharge plasma is applied for film formation, ions affect the quality of the resultant film. In the case of plasma CVD (chemical vapor deposition) method, there exists correspondence between the radicals ratio SiH/H and solar cell conversion efficiency, and plasma measurement may be used for the control of film formation conditions. The state of distribution of radicals in discharge plasma is dependent on the type of radicals, and there is an optimum substrate position. Photoelectric characteristics are improved when a grid electrode is used for plasma separation. The surface of a transparent conductive film (ITO: indium-tin oxide) to be the substrate for film formation needs to be flat, and part of its Si is oxidized into SiO{sub 2} by generated oxygen. An ITO film coated by chemically stable SnO{sub 2} is useful. When the ion plating method is employed, film formation conditions are first selected, and then, in a heat treatment to follow, resistance films of various surface conditions are obtained. Carbon-added a-Si film formation conditions and the relationship between film qualities and solar cell characteristics are elucidated. In a solar cell of the p-i-n structure with an a-Si:C:H film acting as the p-layer, a conversion efficiency of 7.6% is achieved. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}