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Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of production of low-cost monosilane); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (tei cost monosilane seizoho no kenkyu kaihatsu)

Abstract

A low-cost production method is developed for monosilane as a cell film material, 99.9995% pure at a manufacturing cost of 4,500 yen/kg (100 ton/year unit). An experimental unit with a maximum capacity of 1m{sup 3}/H (1 ton/month) gas production is built, and whether it is practical will be clarified by the end of fiscal 1983. The whole monosilane production process, consisting of the electrolysis of eutectic liquid of Li chloride and K chloride, hydrogenation of Li to be generated by the electrolysis, and the generation of monosilane through the reaction of the hydrogenated Li and silicon tetrachloride, proceeds in one large molten salt tub. The chlorine from the electrolysis and Si as material comes into reaction in a salination furnace for the generation of silicon tetrachloride to be supplied to the process. Minor tests are made involving pressure control, distance between the electrodes and the effect of the diaphragm, stirring in the hydrogenation chamber, dust in the monosilane generation chamber, and the insulation of the cathode lead rod, and the results are reflected on the process of experimental unit designing and building. The unit has harm neutralizing facilities for safety assurance because much hydrogen and a little chloride are consumed  More>>
Authors:
"NONE"
Publication Date:
Mar 01, 1982
Product Type:
Technical Report
Report Number:
JP-NEDO-0017969
Resource Relation:
Other Information: PBD: Mar 1982
Subject:
14 SOLAR ENERGY; SUNSHINE PROJECT; PHOTOVOLTAIC POWER PLANTS; AMORPHOUS STATE; SILICON SOLAR CELLS; COST; SILANES; MOLTEN SALTS; ELECTRONS; EUTECTICS; LITHIUM HYDRIDES; SILICON CHLORIDES; PILOT PLANTS; SAFETY ENGINEERING
OSTI ID:
20094356
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040563
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20094356
Submitting Site:
NEDO
Size:
44 pages
Announcement Date:

Citation Formats

Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of production of low-cost monosilane); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (tei cost monosilane seizoho no kenkyu kaihatsu). Japan: N. p., 1982. Web.
Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of production of low-cost monosilane); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (tei cost monosilane seizoho no kenkyu kaihatsu). Japan.
1982. "Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of production of low-cost monosilane); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (tei cost monosilane seizoho no kenkyu kaihatsu)." Japan.
@misc{etde_20094356,
title = {Achievement report for fiscal 1981 on Sunshine Program research and development of photovoltaic power systems. Research and development of amorphous solar cells (Research and development of production of low-cost monosilane); 1981 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu (tei cost monosilane seizoho no kenkyu kaihatsu)}
abstractNote = {A low-cost production method is developed for monosilane as a cell film material, 99.9995% pure at a manufacturing cost of 4,500 yen/kg (100 ton/year unit). An experimental unit with a maximum capacity of 1m{sup 3}/H (1 ton/month) gas production is built, and whether it is practical will be clarified by the end of fiscal 1983. The whole monosilane production process, consisting of the electrolysis of eutectic liquid of Li chloride and K chloride, hydrogenation of Li to be generated by the electrolysis, and the generation of monosilane through the reaction of the hydrogenated Li and silicon tetrachloride, proceeds in one large molten salt tub. The chlorine from the electrolysis and Si as material comes into reaction in a salination furnace for the generation of silicon tetrachloride to be supplied to the process. Minor tests are made involving pressure control, distance between the electrodes and the effect of the diaphragm, stirring in the hydrogenation chamber, dust in the monosilane generation chamber, and the insulation of the cathode lead rod, and the results are reflected on the process of experimental unit designing and building. The unit has harm neutralizing facilities for safety assurance because much hydrogen and a little chloride are consumed while the unit is in operation, with some silicon tetrachloride to be retained in the unit. An infrared absorption method is used to analyze impurities in the monosilane gas, when the method exhibits a capability of detecting 2ppm of methane. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}