Abstract
The aim is to establish the technology of manufacturing SnO{sub 2}/nSi solar cells using a low-temperature deposition method and thereby to reduce the cost. A 5cm-diameter wafer is subjected to a batch process, and a large-area, uniform-quality SnO{sub 2} film is obtained. A conversion efficiency of 13.7% is achieved for a single-crystal 9cm{sup 2} cell. As for the conditions of electrode formation, conventional methods are applied for bonding metals, which are Sn, Ni, Zn, etc., for the surface electrode and rear electrode. Vapor deposition is found to be the most excellent. Since it is known that ohmic characteristics improve when Cr is inserted as the base for the surface electrode rear electrodes, it is anticipated that a contact resistance value not inferior to that by vapor deposition will be achieved once the method of Cr bonding, whether by printing or plating, is established. An n-type low-cost polycrystalline Si substrate is subjected to etching under the optimum conditions, and a conversion efficiency of 9.6% is achieved for a 0.5cm{sup 2} cell. An SnO{sub 2} film is formed on a uneven surface for a reduction in the single-crystal cost, when characteristics better than those of a wafer manufactured by surface polishing are
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Citation Formats
None.
Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of solar energy technologies (Research and development of SnO{sub 2} solar cells); 1981 nendo taiyo energy gijutsu no kenkyu kaihatsu seika hokokusho. SnO{sub 2} taiyo denchi no kenkyu kaihatsu.
Japan: N. p.,
1982.
Web.
None.
Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of solar energy technologies (Research and development of SnO{sub 2} solar cells); 1981 nendo taiyo energy gijutsu no kenkyu kaihatsu seika hokokusho. SnO{sub 2} taiyo denchi no kenkyu kaihatsu.
Japan.
None.
1982.
"Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of solar energy technologies (Research and development of SnO{sub 2} solar cells); 1981 nendo taiyo energy gijutsu no kenkyu kaihatsu seika hokokusho. SnO{sub 2} taiyo denchi no kenkyu kaihatsu."
Japan.
@misc{etde_20094354,
title = {Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of solar energy technologies (Research and development of SnO{sub 2} solar cells); 1981 nendo taiyo energy gijutsu no kenkyu kaihatsu seika hokokusho. SnO{sub 2} taiyo denchi no kenkyu kaihatsu}
author = {None}
abstractNote = {The aim is to establish the technology of manufacturing SnO{sub 2}/nSi solar cells using a low-temperature deposition method and thereby to reduce the cost. A 5cm-diameter wafer is subjected to a batch process, and a large-area, uniform-quality SnO{sub 2} film is obtained. A conversion efficiency of 13.7% is achieved for a single-crystal 9cm{sup 2} cell. As for the conditions of electrode formation, conventional methods are applied for bonding metals, which are Sn, Ni, Zn, etc., for the surface electrode and rear electrode. Vapor deposition is found to be the most excellent. Since it is known that ohmic characteristics improve when Cr is inserted as the base for the surface electrode rear electrodes, it is anticipated that a contact resistance value not inferior to that by vapor deposition will be achieved once the method of Cr bonding, whether by printing or plating, is established. An n-type low-cost polycrystalline Si substrate is subjected to etching under the optimum conditions, and a conversion efficiency of 9.6% is achieved for a 0.5cm{sup 2} cell. An SnO{sub 2} film is formed on a uneven surface for a reduction in the single-crystal cost, when characteristics better than those of a wafer manufactured by surface polishing are realized. Experimentally produced cells are evaluated using a solar simulator, and the result indicates that the electrode forming conditions influence conversion efficiency a great deal. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}
title = {Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of solar energy technologies (Research and development of SnO{sub 2} solar cells); 1981 nendo taiyo energy gijutsu no kenkyu kaihatsu seika hokokusho. SnO{sub 2} taiyo denchi no kenkyu kaihatsu}
author = {None}
abstractNote = {The aim is to establish the technology of manufacturing SnO{sub 2}/nSi solar cells using a low-temperature deposition method and thereby to reduce the cost. A 5cm-diameter wafer is subjected to a batch process, and a large-area, uniform-quality SnO{sub 2} film is obtained. A conversion efficiency of 13.7% is achieved for a single-crystal 9cm{sup 2} cell. As for the conditions of electrode formation, conventional methods are applied for bonding metals, which are Sn, Ni, Zn, etc., for the surface electrode and rear electrode. Vapor deposition is found to be the most excellent. Since it is known that ohmic characteristics improve when Cr is inserted as the base for the surface electrode rear electrodes, it is anticipated that a contact resistance value not inferior to that by vapor deposition will be achieved once the method of Cr bonding, whether by printing or plating, is established. An n-type low-cost polycrystalline Si substrate is subjected to etching under the optimum conditions, and a conversion efficiency of 9.6% is achieved for a 0.5cm{sup 2} cell. An SnO{sub 2} film is formed on a uneven surface for a reduction in the single-crystal cost, when characteristics better than those of a wafer manufactured by surface polishing are realized. Experimentally produced cells are evaluated using a solar simulator, and the result indicates that the electrode forming conditions influence conversion efficiency a great deal. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}