You need JavaScript to view this

Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

Abstract

The R and D was intended to establish the manufacturing technology of a particle non-accelerated growth type silicon thin film crystal, for the purpose of developing a technology for enabling the production of a solar power generation system, whose price is practically 1/100 compared with that of building the system with the current technology, and the R and D was also intended to build the system using such silicon material. While a simple purification method was examined for a low purity metallurgical-grade silicon, a solar-grade silicon (SOG) was developed as the new material this year, with a solar cell experimentally manufactured having a structure directly joined to the substrate material and with evaluation carried out on the characteristic of such solar cell. The application of 'gettering' was tried which was for removing harmful impurities from the substrate obtained from such material, bringing an outlook of manufacturing a solar cell with a conversion efficiency of 10%. Concerning the SOG-Si, the efficiency of 13% or higher was attained through the improvement of the manufacturing process. This was the value comparable to the case of using a conventional high purity monocrystal wafer. Further, the application of an ion implantation method was studied for  More>>
Publication Date:
Mar 01, 1980
Product Type:
Technical Report
Report Number:
JP-NEDO-0017934
Resource Relation:
Other Information: PBD: Mar 1980
Subject:
14 SOLAR ENERGY; SUNSHINE PROJECT; PHOTOVOLTAIC POWER PLANTS; PARTICLES; CRYSTAL GROWTH; SILICON; THIN FILMS; CRYSTALS; GETTERING; IMPURITIES; SUBSTRATES; BONDING; ION BEAM INJECTION
OSTI ID:
20094324
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040529
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20094324
Submitting Site:
NEDO
Size:
199 pages
Announcement Date:
May 21, 2002

Citation Formats

None. Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu. Japan: N. p., 1980. Web.
None. Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu. Japan.
None. 1980. "Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu." Japan.
@misc{etde_20094324,
title = {Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu}
author = {None}
abstractNote = {The R and D was intended to establish the manufacturing technology of a particle non-accelerated growth type silicon thin film crystal, for the purpose of developing a technology for enabling the production of a solar power generation system, whose price is practically 1/100 compared with that of building the system with the current technology, and the R and D was also intended to build the system using such silicon material. While a simple purification method was examined for a low purity metallurgical-grade silicon, a solar-grade silicon (SOG) was developed as the new material this year, with a solar cell experimentally manufactured having a structure directly joined to the substrate material and with evaluation carried out on the characteristic of such solar cell. The application of 'gettering' was tried which was for removing harmful impurities from the substrate obtained from such material, bringing an outlook of manufacturing a solar cell with a conversion efficiency of 10%. Concerning the SOG-Si, the efficiency of 13% or higher was attained through the improvement of the manufacturing process. This was the value comparable to the case of using a conventional high purity monocrystal wafer. Further, the application of an ion implantation method was studied for the purpose of getting a low cost. (NEDO)}
place = {Japan}
year = {1980}
month = {Mar}
}