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Research and development of basic technologies for the next generation industries, 'ultra-grid elements'. Evaluation on the research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'chokoshi soshi'. Kenkyu kaihatsu hyoka

Abstract

Research, development and evaluation were performed with an objective of establishing the basic technology related to ultra-grid elements. With regard to the process technology to search materials suitable for the targets of ultra-grid elements and manufacture ultra-grid element structure, a technology has been completed, by which crystalline growth is performed while controlling AlAs and GaAs at atom layer levels by using the MBE process and MOCVD process. This has allowed the understanding to be progressed on behavior of electrons in hetero interface or very thin films. It has also become possible to acquire new crystals that have band gaps and grid constants matching the performance of the elements. Regarding ultra-grid functional elements, new functional elements with the HET and RHET structures were made by utilizing the characteristics of the ultra grids, and performances of normal temperature operation and high speed operation were investigated. The ultra-grid structured elements have made it possible to embed ultra fine electrode structure into crystals by means of double hetero growth, and a possibility of Si-based PBT was demonstrated. These achievements lead to a belief that the targets intended at the beginning of the present research have been achieved. (NEDO)
Authors:
"NONE"
Publication Date:
Apr 01, 1991
Product Type:
Technical Report
Report Number:
JP-NEDO-010018136
Resource Relation:
Other Information: PBD: Apr 1991
Subject:
42 ENGINEERING; CRYSTAL GROWTH METHODS; SUPERLATTICES; CRYSTAL STRUCTURE; CHEMICAL VAPOR DEPOSITION; MEMBRANES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; GRADED BAND GAPS
OSTI ID:
20091738
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040144
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20091738
Submitting Site:
NEDO
Size:
170 pages
Announcement Date:

Citation Formats

Research and development of basic technologies for the next generation industries, 'ultra-grid elements'. Evaluation on the research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'chokoshi soshi'. Kenkyu kaihatsu hyoka. Japan: N. p., 1991. Web.
Research and development of basic technologies for the next generation industries, 'ultra-grid elements'. Evaluation on the research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'chokoshi soshi'. Kenkyu kaihatsu hyoka. Japan.
1991. "Research and development of basic technologies for the next generation industries, 'ultra-grid elements'. Evaluation on the research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'chokoshi soshi'. Kenkyu kaihatsu hyoka." Japan.
@misc{etde_20091738,
title = {Research and development of basic technologies for the next generation industries, 'ultra-grid elements'. Evaluation on the research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'chokoshi soshi'. Kenkyu kaihatsu hyoka}
abstractNote = {Research, development and evaluation were performed with an objective of establishing the basic technology related to ultra-grid elements. With regard to the process technology to search materials suitable for the targets of ultra-grid elements and manufacture ultra-grid element structure, a technology has been completed, by which crystalline growth is performed while controlling AlAs and GaAs at atom layer levels by using the MBE process and MOCVD process. This has allowed the understanding to be progressed on behavior of electrons in hetero interface or very thin films. It has also become possible to acquire new crystals that have band gaps and grid constants matching the performance of the elements. Regarding ultra-grid functional elements, new functional elements with the HET and RHET structures were made by utilizing the characteristics of the ultra grids, and performances of normal temperature operation and high speed operation were investigated. The ultra-grid structured elements have made it possible to embed ultra fine electrode structure into crystals by means of double hetero growth, and a possibility of Si-based PBT was demonstrated. These achievements lead to a belief that the targets intended at the beginning of the present research have been achieved. (NEDO)}
place = {Japan}
year = {1991}
month = {Apr}
}