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Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the first term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'taikankyo kyoka soshi'. Daiikki kenkyu kaihatsu hyoka

Abstract

Research, development and evaluation were performed with an objective of developing environment resistance strengthened elements, with emphasis placed respectively on radiation resistance, heat resistance, and integration degree according to specific requirements in the using environments. The objective for the first term is to develop the basic technology on element structures required to raise the environment resistance, and the methods of testing them. With regard to heat resistant elements, {beta}-SiC single crystal thin films were formed, and a prospect was obtained on using them as the elements. Regarding MOS integrated circuit, bipolar integrated circuit, and GaAs element, points presenting the largest issue in radiation resistance were noticed according to respective elements. Thus, temperature for gate oxide film formation was lowered, element structures were improved, and gate lengths were decreased to enhance the radiation resistance. For the evaluation test technology, a provisional testing method was prepared for the radiation resistance, a prototype in-situ irradiation testing device was fabricated and so was a prototype high-temperature testing device usable up to 500 degrees C. These achievements lead to a belief that the targets for the first term have been achieved. (NEDO)
Authors:
"NONE"
Publication Date:
Mar 30, 1984
Product Type:
Technical Report
Report Number:
JP-NEDO-010018134
Resource Relation:
Other Information: PBD: 30 Mar 1984
Subject:
42 ENGINEERING; INTEGRATED CIRCUITS; HEAT RESISTANT MATERIALS; RADIATION EFFECTS; MONOCRYSTALS; THIN FILMS; MICROSTRUCTURE; GALLIUM ARSENIDES; SILICON CARBIDES
OSTI ID:
20091736
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040142
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20091736
Submitting Site:
NEDO
Size:
[150] pages
Announcement Date:

Citation Formats

Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the first term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'taikankyo kyoka soshi'. Daiikki kenkyu kaihatsu hyoka. Japan: N. p., 1984. Web.
Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the first term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'taikankyo kyoka soshi'. Daiikki kenkyu kaihatsu hyoka. Japan.
1984. "Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the first term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'taikankyo kyoka soshi'. Daiikki kenkyu kaihatsu hyoka." Japan.
@misc{etde_20091736,
title = {Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the first term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'taikankyo kyoka soshi'. Daiikki kenkyu kaihatsu hyoka}
abstractNote = {Research, development and evaluation were performed with an objective of developing environment resistance strengthened elements, with emphasis placed respectively on radiation resistance, heat resistance, and integration degree according to specific requirements in the using environments. The objective for the first term is to develop the basic technology on element structures required to raise the environment resistance, and the methods of testing them. With regard to heat resistant elements, {beta}-SiC single crystal thin films were formed, and a prospect was obtained on using them as the elements. Regarding MOS integrated circuit, bipolar integrated circuit, and GaAs element, points presenting the largest issue in radiation resistance were noticed according to respective elements. Thus, temperature for gate oxide film formation was lowered, element structures were improved, and gate lengths were decreased to enhance the radiation resistance. For the evaluation test technology, a provisional testing method was prepared for the radiation resistance, a prototype in-situ irradiation testing device was fabricated and so was a prototype high-temperature testing device usable up to 500 degrees C. These achievements lead to a belief that the targets for the first term have been achieved. (NEDO)}
place = {Japan}
year = {1984}
month = {Mar}
}