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Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the second term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'Taikankyo kyoka soshi'. Dainiki kenkyu kaihatsu hyoka

Abstract

In the research and development of the environment resistance strengthened elements with emphasis placed respectively on radiation resistance, heat resistance, and integration degree according to specific requirements in the using environments, the second term has developed an integration technology and its evaluation technology based on the achievements in the first term. In developing the heat resistant element technology, the technology to grow {beta}-SiC crystals was expanded to obtaining thin film crystals with high migratory performance by using higher temperatures. At the same time, development was performed on a technology to manufacture multiple number of transistors on one substrate, such as the doping technology and etching technology. Using this technology, schottky diodes and p-n junction elements being the basic structures of MES-FET and bipolar transistors were fabricated. In the evaluation and testing technology, the {gamma} dose measuring method using TLD was improved, the traceability of {gamma} ray irradiation amount was assured, the simplified irradiation testing method using X-ray was established, and the heat resistance testing technology for electronic parts was established. Furthermore, attempts were made on enhancing radiation resistance of the elements, such as in MOS silicon integrated circuit, bipolar silicon integrated circuit, and compound semiconductor integrated circuit. (NEDO)
Authors:
"NONE"
Publication Date:
Mar 31, 1986
Product Type:
Technical Report
Report Number:
JP-NEDO-010018132
Resource Relation:
Other Information: PBD: 31 Mar 1986
Subject:
42 ENGINEERING; TRANSISTORS; HEAT RESISTANT MATERIALS; RADIATION EFFECTS; INTEGRATED CIRCUITS; CRYSTAL GROWTH METHODS; THIN FILMS; CRYSTAL DOPING; P-N JUNCTIONS; SCHOTTKY BARRIER DIODES
OSTI ID:
20091735
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040141
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20091735
Submitting Site:
NEDO
Size:
[400] pages
Announcement Date:

Citation Formats

Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the second term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'Taikankyo kyoka soshi'. Dainiki kenkyu kaihatsu hyoka. Japan: N. p., 1986. Web.
Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the second term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'Taikankyo kyoka soshi'. Dainiki kenkyu kaihatsu hyoka. Japan.
1986. "Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the second term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'Taikankyo kyoka soshi'. Dainiki kenkyu kaihatsu hyoka." Japan.
@misc{etde_20091735,
title = {Research and development of basic technologies for the next generation industries, 'environment resistance strengthened elements'. Evaluation on the second term research and development; Jisedai sangyo kiban gijutsu kenkyu kaihatsu 'Taikankyo kyoka soshi'. Dainiki kenkyu kaihatsu hyoka}
abstractNote = {In the research and development of the environment resistance strengthened elements with emphasis placed respectively on radiation resistance, heat resistance, and integration degree according to specific requirements in the using environments, the second term has developed an integration technology and its evaluation technology based on the achievements in the first term. In developing the heat resistant element technology, the technology to grow {beta}-SiC crystals was expanded to obtaining thin film crystals with high migratory performance by using higher temperatures. At the same time, development was performed on a technology to manufacture multiple number of transistors on one substrate, such as the doping technology and etching technology. Using this technology, schottky diodes and p-n junction elements being the basic structures of MES-FET and bipolar transistors were fabricated. In the evaluation and testing technology, the {gamma} dose measuring method using TLD was improved, the traceability of {gamma} ray irradiation amount was assured, the simplified irradiation testing method using X-ray was established, and the heat resistance testing technology for electronic parts was established. Furthermore, attempts were made on enhancing radiation resistance of the elements, such as in MOS silicon integrated circuit, bipolar silicon integrated circuit, and compound semiconductor integrated circuit. (NEDO)}
place = {Japan}
year = {1986}
month = {Mar}
}