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Research and development of basic technologies for next-generation industry. Evaluation of 1st-phase research and development of 3-dimensional circuit devices; Jisedai sangyo kiban gijutsu kenkyu kaihatsu. Sanjigen kairo soshi daiikki kenkyu kaihatsu hyoka

Abstract

The aim is to develop basic technologies relating to 3-dimensional circuit devices with an ultrahigh-density accumulation of functions therein for the embodiment of ultra-small high-performance data processing devices or artificial brain-like multiple-function data processing devices. To be developed are laminate-structure devices which have an ultrahigh-density accumulation of logic and memory functions or a complex accumulation of functions including signal and sensor functions. In the 1st phase, importance is attached to the development of a multilayer crystalline structure, which is the most elementary in the development of 3-dimensional circuit devices, and of processing technologies for them. Propositions are made and analyses are conducted relating to the enlargement of exposure region in synchrotron radiation lithography, development of a maskless beam process of a resolution of 0.1{mu}m, development of a focused ion beam device, etc. Recrystallization methods using a laser beam or a linear electron beam are developed for the growth of multilayer crystals, and are proved to be effective. The application feasibility of a flat deposition dry process etc. to laminate processing technologies is demonstrated. Concerning integration technologies, some laminated circuit devices are experimentally fabricated, and their behavior is determined. The goals of the 1st phase are found achieved. (NEDO)
Authors:
"NONE"
Publication Date:
Mar 30, 1985
Product Type:
Technical Report
Report Number:
JP-NEDO-010018055
Resource Relation:
Other Information: PBD: 30 Mar 1985
Subject:
42 ENGINEERING; TECHNOLOGY IMPACTS; RESEARCH PROGRAMS; SPACE DEPENDENCE; MICROELECTRONIC CIRCUITS; INTEGRATED CIRCUITS; MATHEMATICAL LOGIC; MEMORY DEVICES; ARTIFICIAL INTELLIGENCE; SYNCHROTRON RADIATION; ETCHING; MASKING; BEAM OPTICS
OSTI ID:
20090346
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040076
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20090346
Submitting Site:
NEDO
Size:
[250] pages
Announcement Date:

Citation Formats

Research and development of basic technologies for next-generation industry. Evaluation of 1st-phase research and development of 3-dimensional circuit devices; Jisedai sangyo kiban gijutsu kenkyu kaihatsu. Sanjigen kairo soshi daiikki kenkyu kaihatsu hyoka. Japan: N. p., 1985. Web.
Research and development of basic technologies for next-generation industry. Evaluation of 1st-phase research and development of 3-dimensional circuit devices; Jisedai sangyo kiban gijutsu kenkyu kaihatsu. Sanjigen kairo soshi daiikki kenkyu kaihatsu hyoka. Japan.
1985. "Research and development of basic technologies for next-generation industry. Evaluation of 1st-phase research and development of 3-dimensional circuit devices; Jisedai sangyo kiban gijutsu kenkyu kaihatsu. Sanjigen kairo soshi daiikki kenkyu kaihatsu hyoka." Japan.
@misc{etde_20090346,
title = {Research and development of basic technologies for next-generation industry. Evaluation of 1st-phase research and development of 3-dimensional circuit devices; Jisedai sangyo kiban gijutsu kenkyu kaihatsu. Sanjigen kairo soshi daiikki kenkyu kaihatsu hyoka}
abstractNote = {The aim is to develop basic technologies relating to 3-dimensional circuit devices with an ultrahigh-density accumulation of functions therein for the embodiment of ultra-small high-performance data processing devices or artificial brain-like multiple-function data processing devices. To be developed are laminate-structure devices which have an ultrahigh-density accumulation of logic and memory functions or a complex accumulation of functions including signal and sensor functions. In the 1st phase, importance is attached to the development of a multilayer crystalline structure, which is the most elementary in the development of 3-dimensional circuit devices, and of processing technologies for them. Propositions are made and analyses are conducted relating to the enlargement of exposure region in synchrotron radiation lithography, development of a maskless beam process of a resolution of 0.1{mu}m, development of a focused ion beam device, etc. Recrystallization methods using a laser beam or a linear electron beam are developed for the growth of multilayer crystals, and are proved to be effective. The application feasibility of a flat deposition dry process etc. to laminate processing technologies is demonstrated. Concerning integration technologies, some laminated circuit devices are experimentally fabricated, and their behavior is determined. The goals of the 1st phase are found achieved. (NEDO)}
place = {Japan}
year = {1985}
month = {Mar}
}