Abstract
This research was intended to establish technology for the substrate of an environmental resistance reinforcing element in which environmental resistance was enhanced against radiation, heat, mechanical shock, etc., for the purpose of realizing various kinds of equipment and devices for performing advanced information processing under severe environmental conditions of outer space, nuclear reactors, travelling objects such as automobiles and aircrafts, and plants. In the R and D of the technology of a MOS type silicon integrated circuit element, a low temperature generalizing process technology was developed, with selection made for SOS and bulk silicon. In addition, strength of a wiring connecting part was examined, as was the heat dissipation of the package. In the R and D of the technology of a bipolar type silicon integrated circuit element, examined were the element design/integration-technology/materials, evaluation and optimization of the processing technology, reproducibility of the factor processing technology, environmentally resistant plastic packages, etc. In the R and D of the technology of a compound semiconductor integrated circuit element, analysis of a gate electrode structure and deteriorating mechanism was made, as was the influence of the element structure parameter on environmental resistance, with an improved trial manufacturing and an environmental test performed for
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Citation Formats
None.
Report on 1985 research result on the R and D of environmental resistance reinforcing element; 1985 nendo taikankyo kyoka soshi no kenkyu kaihatsu.
Japan: N. p.,
1996.
Web.
None.
Report on 1985 research result on the R and D of environmental resistance reinforcing element; 1985 nendo taikankyo kyoka soshi no kenkyu kaihatsu.
Japan.
None.
1996.
"Report on 1985 research result on the R and D of environmental resistance reinforcing element; 1985 nendo taikankyo kyoka soshi no kenkyu kaihatsu."
Japan.
@misc{etde_20090275,
title = {Report on 1985 research result on the R and D of environmental resistance reinforcing element; 1985 nendo taikankyo kyoka soshi no kenkyu kaihatsu}
author = {None}
abstractNote = {This research was intended to establish technology for the substrate of an environmental resistance reinforcing element in which environmental resistance was enhanced against radiation, heat, mechanical shock, etc., for the purpose of realizing various kinds of equipment and devices for performing advanced information processing under severe environmental conditions of outer space, nuclear reactors, travelling objects such as automobiles and aircrafts, and plants. In the R and D of the technology of a MOS type silicon integrated circuit element, a low temperature generalizing process technology was developed, with selection made for SOS and bulk silicon. In addition, strength of a wiring connecting part was examined, as was the heat dissipation of the package. In the R and D of the technology of a bipolar type silicon integrated circuit element, examined were the element design/integration-technology/materials, evaluation and optimization of the processing technology, reproducibility of the factor processing technology, environmentally resistant plastic packages, etc. In the R and D of the technology of a compound semiconductor integrated circuit element, analysis of a gate electrode structure and deteriorating mechanism was made, as was the influence of the element structure parameter on environmental resistance, with an improved trial manufacturing and an environmental test performed for the actually mounted bodies. (NEDO)}
place = {Japan}
year = {1996}
month = {Mar}
}
title = {Report on 1985 research result on the R and D of environmental resistance reinforcing element; 1985 nendo taikankyo kyoka soshi no kenkyu kaihatsu}
author = {None}
abstractNote = {This research was intended to establish technology for the substrate of an environmental resistance reinforcing element in which environmental resistance was enhanced against radiation, heat, mechanical shock, etc., for the purpose of realizing various kinds of equipment and devices for performing advanced information processing under severe environmental conditions of outer space, nuclear reactors, travelling objects such as automobiles and aircrafts, and plants. In the R and D of the technology of a MOS type silicon integrated circuit element, a low temperature generalizing process technology was developed, with selection made for SOS and bulk silicon. In addition, strength of a wiring connecting part was examined, as was the heat dissipation of the package. In the R and D of the technology of a bipolar type silicon integrated circuit element, examined were the element design/integration-technology/materials, evaluation and optimization of the processing technology, reproducibility of the factor processing technology, environmentally resistant plastic packages, etc. In the R and D of the technology of a compound semiconductor integrated circuit element, analysis of a gate electrode structure and deteriorating mechanism was made, as was the influence of the element structure parameter on environmental resistance, with an improved trial manufacturing and an environmental test performed for the actually mounted bodies. (NEDO)}
place = {Japan}
year = {1996}
month = {Mar}
}