Abstract
For the purpose of contributing to the efficient R and D of three-dimensional circuit element technologies (laminated high density integrated element technology, laminated high-speed multi-functional integrated element technology, and laminated large capacity multi-functional integrated element technology), conducted were the survey of domestic and overseas technological trend, investigation of progress status of R and D, and extraction and analysis of problems concerning R and D. In the technological trend survey, the technologies that could sprout in the future were investigated and examined. In addition, examined as much as possible at the present time were the appearance as a device imaginable at the time of the development of the three-dimensional circuit element technology, the point at issue, essential technologies for the development of the element, etc., with the results reported. A report was made on the technology of obtaining a silicon crystal layer on an insulating object. The status quo of a technology for forming an insulated film suitable for a silicon multi-layer structure and of a technology for forming an electrode material was explained, as was a layer forming technology for an insulating object and a metallic material concerning a compound semiconductor layer technology. With the present status summarized on an
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Citation Formats
None.
Report on 1981 research result on the R and D of three-dimensional circuit element; 1981 nendo sanjigen kairo soshi no kenkyu kaihatsu.
Japan: N. p.,
1982.
Web.
None.
Report on 1981 research result on the R and D of three-dimensional circuit element; 1981 nendo sanjigen kairo soshi no kenkyu kaihatsu.
Japan.
None.
1982.
"Report on 1981 research result on the R and D of three-dimensional circuit element; 1981 nendo sanjigen kairo soshi no kenkyu kaihatsu."
Japan.
@misc{etde_20090272,
title = {Report on 1981 research result on the R and D of three-dimensional circuit element; 1981 nendo sanjigen kairo soshi no kenkyu kaihatsu}
author = {None}
abstractNote = {For the purpose of contributing to the efficient R and D of three-dimensional circuit element technologies (laminated high density integrated element technology, laminated high-speed multi-functional integrated element technology, and laminated large capacity multi-functional integrated element technology), conducted were the survey of domestic and overseas technological trend, investigation of progress status of R and D, and extraction and analysis of problems concerning R and D. In the technological trend survey, the technologies that could sprout in the future were investigated and examined. In addition, examined as much as possible at the present time were the appearance as a device imaginable at the time of the development of the three-dimensional circuit element technology, the point at issue, essential technologies for the development of the element, etc., with the results reported. A report was made on the technology of obtaining a silicon crystal layer on an insulating object. The status quo of a technology for forming an insulated film suitable for a silicon multi-layer structure and of a technology for forming an electrode material was explained, as was a layer forming technology for an insulating object and a metallic material concerning a compound semiconductor layer technology. With the present status summarized on an image sensor in two dimensions, the transmission electron microscope method was introduced. Last of all, investigation results were compiled on the state of progress of each research for the three-dimensional circuit element technology. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}
title = {Report on 1981 research result on the R and D of three-dimensional circuit element; 1981 nendo sanjigen kairo soshi no kenkyu kaihatsu}
author = {None}
abstractNote = {For the purpose of contributing to the efficient R and D of three-dimensional circuit element technologies (laminated high density integrated element technology, laminated high-speed multi-functional integrated element technology, and laminated large capacity multi-functional integrated element technology), conducted were the survey of domestic and overseas technological trend, investigation of progress status of R and D, and extraction and analysis of problems concerning R and D. In the technological trend survey, the technologies that could sprout in the future were investigated and examined. In addition, examined as much as possible at the present time were the appearance as a device imaginable at the time of the development of the three-dimensional circuit element technology, the point at issue, essential technologies for the development of the element, etc., with the results reported. A report was made on the technology of obtaining a silicon crystal layer on an insulating object. The status quo of a technology for forming an insulated film suitable for a silicon multi-layer structure and of a technology for forming an electrode material was explained, as was a layer forming technology for an insulating object and a metallic material concerning a compound semiconductor layer technology. With the present status summarized on an image sensor in two dimensions, the transmission electron microscope method was introduced. Last of all, investigation results were compiled on the state of progress of each research for the three-dimensional circuit element technology. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}