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Report on 1981 research result on the R and D of superlattice element; 1981 nendo chokokoshi no kenkyu kaihatsu

Abstract

Development of basic technology was conducted on a superstructure lattice element. With an objective of developing a molecular beam epitaxy (MBE) method, which is the basic technology for preparing the superstructure lattice element, the development of silicon clean surface preparing technology was performed, as were the development of molecular beam source, the development of two-dimensional analytical program for designing the element, etc. For the clean surface, comparison was made on various methods, developing a method capable of making a clean surface usable for the MBE fully by a low temperature process that had been non-existent. This was a low temperature thermal etching method which jointly uses a chemical process and a low warmth process. In the molecular beam source, it was found that a large size was necessary for the purpose of improving the purity of the molecular beam and also the characteristics of an epitaxial film, so that a large molecular beam source was developed. A conventional two-dimensional analytical program was improved and developed for the purpose of designing the superstructure lattice element and clarifying the characteristics. By applying the result to the analysis of the motion of the element with impurities doped in the manner of a superstructure  More>>
Authors:
"NONE"
Publication Date:
Mar 01, 1982
Product Type:
Technical Report
Report Number:
JP-NEDO-010018126
Resource Relation:
Other Information: PBD: Mar 1982
Subject:
42 ENGINEERING; SUPERLATTICES; MOLECULAR BEAM EPITAXY; SILICON; DECONTAMINATION; SURFACES; ETCHING; DOPED MATERIALS; TRACE AMOUNTS
OSTI ID:
20090271
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
TRN: JN0040001
Availability:
Available to ETDE participating countries only(see www.etde.org); commercial reproduction prohibited; OSTI as DE20090271
Submitting Site:
NEDO
Size:
268 pages
Announcement Date:

Citation Formats

Report on 1981 research result on the R and D of superlattice element; 1981 nendo chokokoshi no kenkyu kaihatsu. Japan: N. p., 1982. Web.
Report on 1981 research result on the R and D of superlattice element; 1981 nendo chokokoshi no kenkyu kaihatsu. Japan.
1982. "Report on 1981 research result on the R and D of superlattice element; 1981 nendo chokokoshi no kenkyu kaihatsu." Japan.
@misc{etde_20090271,
title = {Report on 1981 research result on the R and D of superlattice element; 1981 nendo chokokoshi no kenkyu kaihatsu}
abstractNote = {Development of basic technology was conducted on a superstructure lattice element. With an objective of developing a molecular beam epitaxy (MBE) method, which is the basic technology for preparing the superstructure lattice element, the development of silicon clean surface preparing technology was performed, as were the development of molecular beam source, the development of two-dimensional analytical program for designing the element, etc. For the clean surface, comparison was made on various methods, developing a method capable of making a clean surface usable for the MBE fully by a low temperature process that had been non-existent. This was a low temperature thermal etching method which jointly uses a chemical process and a low warmth process. In the molecular beam source, it was found that a large size was necessary for the purpose of improving the purity of the molecular beam and also the characteristics of an epitaxial film, so that a large molecular beam source was developed. A conventional two-dimensional analytical program was improved and developed for the purpose of designing the superstructure lattice element and clarifying the characteristics. By applying the result to the analysis of the motion of the element with impurities doped in the manner of a superstructure lattice, the effectiveness was confirmed of this analytical method. (NEDO)}
place = {Japan}
year = {1982}
month = {Mar}
}