Abstract
Development will be made on high-performance a-solar cells as part of developing practical application technology for a-solar cells for electric power use. Development will be also made on a low-cost process technology. This paper describes the achievements attained during fiscal 1997. Quality improvement has been realized by using a high RF power hydrogen dilution process on a-Si films for front cells of lamination type cells. Four times faster film forming speed was obtained even by using the VHF plasma CVD process, with film quality equivalent to those made by using the conventional RF process maintained. By optimizing the light enclosing construction, the short circuit current was enhanced by over 20%. Discussions were given on forming homogenous a-Si films by optimizing the conditions for forming films on large-area substrates, which resulted in forming film of 30 cm times 40 cm size with good homogeneity at a film forming speed three times faster than the conventional speed. A surface electrode was formed successfully with good uniformity on a substrate with a size of 60 cm times 90 cm. Productivity greater by over three times the conventional productivity was achieved in patterning of transparent electrodes by using high-output laser. Simultaneous and collective patterning
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Achievement report for fiscal 1997 on developing practical application technology for photovoltaic power generation systems under the New Sunshine Project. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, and development of technologies to manufacture new type amorphous solar cells; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, shingata amorphous taiyo denchi no seizo gijutsu kaihatsu.
Japan: N. p.,
1998.
Web.
None.
Achievement report for fiscal 1997 on developing practical application technology for photovoltaic power generation systems under the New Sunshine Project. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, and development of technologies to manufacture new type amorphous solar cells; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, shingata amorphous taiyo denchi no seizo gijutsu kaihatsu.
Japan.
None.
1998.
"Achievement report for fiscal 1997 on developing practical application technology for photovoltaic power generation systems under the New Sunshine Project. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, and development of technologies to manufacture new type amorphous solar cells; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, shingata amorphous taiyo denchi no seizo gijutsu kaihatsu."
Japan.
@misc{etde_20079617,
title = {Achievement report for fiscal 1997 on developing practical application technology for photovoltaic power generation systems under the New Sunshine Project. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, and development of technologies to manufacture new type amorphous solar cells; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, shingata amorphous taiyo denchi no seizo gijutsu kaihatsu}
author = {None}
abstractNote = {Development will be made on high-performance a-solar cells as part of developing practical application technology for a-solar cells for electric power use. Development will be also made on a low-cost process technology. This paper describes the achievements attained during fiscal 1997. Quality improvement has been realized by using a high RF power hydrogen dilution process on a-Si films for front cells of lamination type cells. Four times faster film forming speed was obtained even by using the VHF plasma CVD process, with film quality equivalent to those made by using the conventional RF process maintained. By optimizing the light enclosing construction, the short circuit current was enhanced by over 20%. Discussions were given on forming homogenous a-Si films by optimizing the conditions for forming films on large-area substrates, which resulted in forming film of 30 cm times 40 cm size with good homogeneity at a film forming speed three times faster than the conventional speed. A surface electrode was formed successfully with good uniformity on a substrate with a size of 60 cm times 90 cm. Productivity greater by over three times the conventional productivity was achieved in patterning of transparent electrodes by using high-output laser. Simultaneous and collective patterning and very small and long size collective patterning were realized in a-Si film selection patterning by using the plasma CVD process. (NEDO)}
place = {Japan}
year = {1998}
month = {Mar}
}
title = {Achievement report for fiscal 1997 on developing practical application technology for photovoltaic power generation systems under the New Sunshine Project. Development of technologies to manufacture thin film solar cells, development of technologies to manufacture low-cost large-area modules, and development of technologies to manufacture new type amorphous solar cells; 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu, shingata amorphous taiyo denchi no seizo gijutsu kaihatsu}
author = {None}
abstractNote = {Development will be made on high-performance a-solar cells as part of developing practical application technology for a-solar cells for electric power use. Development will be also made on a low-cost process technology. This paper describes the achievements attained during fiscal 1997. Quality improvement has been realized by using a high RF power hydrogen dilution process on a-Si films for front cells of lamination type cells. Four times faster film forming speed was obtained even by using the VHF plasma CVD process, with film quality equivalent to those made by using the conventional RF process maintained. By optimizing the light enclosing construction, the short circuit current was enhanced by over 20%. Discussions were given on forming homogenous a-Si films by optimizing the conditions for forming films on large-area substrates, which resulted in forming film of 30 cm times 40 cm size with good homogeneity at a film forming speed three times faster than the conventional speed. A surface electrode was formed successfully with good uniformity on a substrate with a size of 60 cm times 90 cm. Productivity greater by over three times the conventional productivity was achieved in patterning of transparent electrodes by using high-output laser. Simultaneous and collective patterning and very small and long size collective patterning were realized in a-Si film selection patterning by using the plasma CVD process. (NEDO)}
place = {Japan}
year = {1998}
month = {Mar}
}