You need JavaScript to view this

Thermoelectric properties of ZnSb films grown by MOCVD

Conference:

Abstract

The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.
Publication Date:
Jul 01, 1997
Product Type:
Conference
Reference Number:
EDB-00:007293
Resource Relation:
Conference: 1997 Materials Research Society Spring Meeting, San Francisco, CA (US), 03/31/1997--04/03/1997; Other Information: Single article reprints are available through University Microfilms Inc., 300 North Zeeb Road, Ann Arbor, Michigan 48106; PBD: 1997; Related Information: In: Thermoelectric materials -- New directions and approaches. Materials Research Society symposium proceedings, Volume 478, by Tritt, T.M.; Kanatzidis, M.G.; Lyon, H.B. Jr.; Mahan, G.D. [eds.], 359 pages.
Subject:
30 DIRECT ENERGY CONVERSION; 36 MATERIALS SCIENCE; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES; ZINC ALLOYS; ANTIMONY ALLOYS; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; CARRIER MOBILITY; THERMAL CONDUCTIVITY
OSTI ID:
20014252
Research Organizations:
Research Triangle Inst., Research Triangle Park, NC (US)
Country of Origin:
United States
Language:
English
Other Identifying Numbers:
Other: ISBN 1-55899-382-7; TRN: IM200012%%180
Availability:
Materials Research Society, 506 Keystone Drive, Warrendale, PA 15086 (US); $71.00. Prices may become outdated.
Submitting Site:
DELTA
Size:
page(s) 145-150
Announcement Date:
Mar 22, 2000

Conference:

Citation Formats

Venkatasubramanian, R, Watko, E, and Colpitts, T. Thermoelectric properties of ZnSb films grown by MOCVD. United States: N. p., 1997. Web.
Venkatasubramanian, R, Watko, E, & Colpitts, T. Thermoelectric properties of ZnSb films grown by MOCVD. United States.
Venkatasubramanian, R, Watko, E, and Colpitts, T. 1997. "Thermoelectric properties of ZnSb films grown by MOCVD." United States.
@misc{etde_20014252,
title = {Thermoelectric properties of ZnSb films grown by MOCVD}
author = {Venkatasubramanian, R, Watko, E, and Colpitts, T}
abstractNote = {The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.}
place = {United States}
year = {1997}
month = {Jul}
}