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ETDEWEB   /       /    The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals

The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals

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Abstract

Thermoelectric power, electrical resistivity, and Hall effect of p-type Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} (0 < x < 0.03) singlecrystals have been measured in the temperature range 4.2--300K. By doping of Sn atoms into the host Bi{sub 2}Te{sub 3} lattice, the enhancement in the thermoelectric power is observed in the intermediate temperature range 30--150K for x {le} 0,0075. The activation type behavior of Hall coefficient and resistivity are found which corresponds to the Sn-induced impurity band located above the second lower valence band.
Authors:
Publication Date:
Jul 01, 1997
Product Type:
Conference
Reference Number:
EDB-00:007291
Resource Relation:
Conference: 1997 Materials Research Society Spring Meeting, San Francisco, CA (US), 03/31/1997--04/03/1997; Other Information: Single article reprints are available through University Microfilms Inc., 300 North Zeeb Road, Ann Arbor, Michigan 48106; PBD: 1997; Related Information: In: Thermoelectric materials -- New directions and approaches. Materials Research Society symposium proceedings, Volume 478, by Tritt, T.M.; Kanatzidis, M.G.; Lyon, H.B. Jr.; Mahan, G.D. [eds.], 359 pages.
Subject:
30 DIRECT ENERGY CONVERSION; 36 MATERIALS SCIENCE; THERMOELECTRIC MATERIALS; SEMICONDUCTOR MATERIALS; SEEBECK EFFECT; ELECTRIC CONDUCTIVITY; HALL EFFECT; CRYSTAL DOPING; BISMUTH TELLURIDES; TIN TELLURIDES; EXPERIMENTAL DATA; TEMPERATURE DEPENDENCE
OSTI ID:
20014250
Research Organizations:
Moscow State Univ. (RU)
Country of Origin:
United States
Language:
English
Other Identifying Numbers:
Other: ISBN 1-55899-382-7; TRN: IM200012%%178
Availability:
Materials Research Society, 506 Keystone Drive, Warrendale, PA 15086 (US); $71.00. Prices may become outdated.
Submitting Site:
DELTA
Size:
page(s) 133-138
Announcement Date:
Mar 22, 2000

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Citation Formats

Kulbachinskii, V A, Negishi, H, Sasaki, M, Giman, Y, and Inoue, M. The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals. United States: N. p., 1997. Web.
Kulbachinskii, V A, Negishi, H, Sasaki, M, Giman, Y, &amp; Inoue, M. The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals. United States.
Kulbachinskii, V A, Negishi, H, Sasaki, M, Giman, Y, and Inoue, M. 1997. "The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals." United States.
@misc{etde_20014250,
title = {The enhancement of thermoelectric power and scattering of carriers in Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} single crystals}
 author = {Kulbachinskii, V A, Negishi, H, Sasaki, M, Giman, Y, and Inoue, M}
 abstractNote = {Thermoelectric power, electrical resistivity, and Hall effect of p-type Bi{sub 2{minus}x}Sn{sub x}Te{sub 3} (0 < x < 0.03) singlecrystals have been measured in the temperature range 4.2--300K. By doping of Sn atoms into the host Bi{sub 2}Te{sub 3} lattice, the enhancement in the thermoelectric power is observed in the intermediate temperature range 30--150K for x {le} 0,0075. The activation type behavior of Hall coefficient and resistivity are found which corresponds to the Sn-induced impurity band located above the second lower valence band.}
 place = {United States}
 year = {1997}
 month = {Jul}
 }